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2SC1623 の電気的特性と機能

2SC1623のメーカーはNECです、この部品の機能は「AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SC1623
部品説明 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
メーカ NEC
ロゴ NEC ロゴ 




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2SC1623 Datasheet, 2SC1623 PDF,ピン配置, 機能
DATA SHEET
SILICON TRANSISTOR
2SC1623
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• High DC Current Gain: hFE = 200 TYP.
(VCE = 6.0 V, IC = 1.0 mA)
• High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Current (TA = 25 ˚C)
Collector to Base Voltage
VCBO 60 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage
VEBO 5.0 V
Collector Current (DC)
IC 100 mA
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature PT
200 mW
Maximum Temperatures
Junction Temperature
Tj 150 ˚C
Storage Temperature Range Tstg –55 to +150 ˚C
PACKAGE DIMENSIONS
in millimeters
2.8 ± 0.2
1.5
0.65
+0.1
– 0.15
2
13
Marking
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Base to Saturation Voltage
Base Emitter Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE
fT
Cob
MIN.
90
0.55
* Pulsed: PW 350 µs, Duty Cycle 2 %
TYP.
200
0.15
0.86
0.62
250
3.0
1: Emitter
2: Base
3: Collector
MAX.
0.1
0.1
600
0.3
1.0
0.65
UNIT
µA
µA
V
V
V
MHz
pF
TEST CONDITIONS
VCB = 60 V, IE = 0
VEB = 5.0 V, IC = 0
VCE = 6.0 V, IC = 1.0 mA*
IC = 100 mA, IB = 10 mA*
IC = 100 mA, IB = 10 mA*
VCE = 6.0 V, IC = 1.0 mA*
VCE = 6.0 V, IE = –10 mA
VCB = 6.0 V, IE = 0, f = 1.0 MHz
hFE Classification
Marking
hFE
L4
90 to 180
L5
135 to 270
L6
200 to 400
L7
300 to 600
Document No. TC-1481C
(O.D. No. TC-5172C)
Date Published July 1995 P
Printed in Japan
© 1984

1 Page





2SC1623 pdf, ピン配列
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 6.0 V
50 Pulsed
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VBE - Base to Emitter Voltage - V
1.0
2SC1623
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
10 Pulsed
5
2 IC = 50 · IB
1
VBE(sat)
10 20
0.5
0.2
0.1
0.05
VCE(sat)
IC = 50 · IB
20
10
0.02
0.01
0.1 0.2
0.5 1 2 5 10 20
IC - Collector Current - mA
50 100
10000
5000
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
2000
1000
500
VCE =10 V 6 V
200
2V
100 1 V
50
20
10
–0.1 –0.2
–0.5 –1 –2 –5 –10 –20
IE - Emitter Current - mA
–50 –100
INPUT AND OUTPUT CAPACITANCE
vs. REVERSE VOLTAGE
100
f = 1.0 MHz
50
20
10
Cib (IC = 0)
5 Cob (IE = 0)
2
1
0.5
0.2
0.1
0.1 0.2 0.5 1 2
5 10 20 50 100
VCB - Collector to Base Voltage - V
VEB - Emittor to Base Voltage - V
1000
800
SMALL SIGNAL CURRENT GAIN vs.
DC CURRENT GAIN
VCE = 6.0 V
IC = 1.0 mA
f = 1.0 kHz
INPUT IMPEDANCE VOLTAGE FEEDBACK
RATIO AND OUTPUT ADMITTANCE vs.
SMALL SIGNAL CURRENT GAIN
100 50 50
80 40 40
VCE = 6.0 V
IC = 1.0 mA
f = 1.0 kHz
600 60 30 30
400
40 20 20
hoe
hre
hie
200 20 10 10
0 000
0 200 400 600 800 1000
hFE - DC Current Gain
200 400 600 800
hfe - Small Signal Current Gain
1000
3


3Pages


2SC1623 電子部品, 半導体
[MEMO]
2SC1623
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11

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