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2SC1047 の電気的特性と機能

2SC1047のメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon NPN epitaxial planer type(For high-frequency amplification)」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SC1047
部品説明 Silicon NPN epitaxial planer type(For high-frequency amplification)
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 




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2SC1047 Datasheet, 2SC1047 PDF,ピン配置, 機能
Transistor
2SC1047
Silicon NPN epitaxial planer type
For high-frequency amplification
s Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency fT.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
3
20
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Power gain
Noise figure
Symbol
VCBO
VEBO
hFE*
VBE
Cre
fT
PG
NF
Conditions
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCE = 6V, IC = 1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 200MHz
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA, f = 100MHz
min typ max Unit
30 V
3V
40 260
0.72 V
0.8 1 pF
450 650
MHz
20 dB
3.3 5 dB
*hFE Rank classification
Rank
B
hFE 40 ~ 110
C
65 ~ 160
D
100 ~ 260
1

1 Page





2SC1047 pdf, ピン配列
Transistor
Cob — VCB
1.2
IE=0
f=1MHz
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
0 5 10 15 20 25 30
Collector to base voltage VCB (V)
bie — gie
20 yie=gie+jbie
18 VCE=10V
–4mA
150
16 –7mA 100
–2mA
14
100
12
10
–1mA
58
8
58
6
25
4
25
2
f=10.7MHz
0
0 3 6 9 12 15
Input conductance gie (mS)
boe — goe
1.2
150
–2mA
1.0
–4mA
100
0.8
–7mA
0.6
58
0.4
25
0.2
0
0
f=10.7MHz
0.1 0.2
yoe=goe+jboe
VCE=10V
0.3 0.4 0.5
Output conductance goe (mS)
PG — IE
40
f=100MHz
35
Rg=50
Ta=25˚C
30
VCE=10V
25 6V
20
15
10
5
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2SC1047
NF — IE
12
f=100MHz
Rg=50
Ta=25˚C
10
8
6
4 VCE=6V, 10V
2
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
bre — gre
0
yre=gre+jbre
VCE=10V
–1
–2
10.7
25
–1mA
–4mA
IE=–7mA
58
–3
–4 100
bfe — gfe
0
– 0.4mA
–1mA
–20
150
100
–40
–2mA
150
10.7 25
58
–4mA
100
–60
–80
f=15MHz
IE=–7mA
100
58
–5
–6 f=150MHz
– 0.5 – 0.4 – 0.3 – 0.2 – 0.1
0
Reverse transfer conductance gre (mS)
–100
–120
0
yfe=gfe+jbfe
VCE=10V
20 40 60 80 100
Forward transfer conductance gfe (mS)
3


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Link :


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