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Número de pieza | CPMF-1200-S160B | |
Descripción | Silicon Carbide MOSFET | |
Fabricantes | CREE | |
Logotipo | ||
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CPMF-1200-S160B
Z-FeTTM Silicon Carbide MOSFET
N-Channel Enhancement Mode
Bare Die
VDS
RDS(on)
Qg
= 1200 V
= 160 mΩ
= 47 nC
Features
Package
•
•
Industry Leading RDS(on)
High Speed Switching
• Low Capacitances
• Easy to Parallel
• Simple to Drive
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Avalanche Ruggedness
• Increase System Switching Frequency
Applications
• Solar Inverters
• Motor Drives
• Military and Aerospace
Gate
Source
Source
DIE
DD
GG
SS
Part Number
CPMF-1200-S160B
Package
DIE
Maximum Ratings
Symbol
Parameter
Value Unit
Test Conditions
Note
ID Continuous Drain Current
IDpulse Pulsed Drain Current
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
26.1
14.7
56
1.1
400
A VGS@20V, TC = 25˚C
VGS@20V, TC = 100˚C
A Pulse width tP limited by Tjmax
TC = 25˚C, tp = 1ms
J
ID = 10A, VDD = 50 V,
L = 9.5 mH
mJ tAR limited by Tjmax
1
1
IAR Repetitive Avalanche Current
10 A ID = 10A, VDD = 50 V, L = 3 mH
tAR limited by Tjmax
VGS Gate Source Voltage
-5/+25 V
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
177.4
-55 to
+135
260
W TC=25˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note:
1. Assumes a thermal resistance junction to case of ≤ 0.62 °C/W.
1
1 CPMF-1200-S160B Rev. -
Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
Clamped Inductive Switch Testing Fixture
+
800V
-
42.3μf
856μH
C2D10120D
10A, 1200V
SiC Schottky
VGS(on)
Input (Vi) 50%
10%
VGS(off)
90%
tw
pulse duration
Input Pulse
Rise Time
90%
50%
10%
Input Pulse
Fall Time
CMF10120D
D.U.T.
iD(on)
Output (iD)
iD(off)
td(on)i
tfi
10%
ton(i)
90%
td(off)i
tri
10%
90%
toff(i)
Fig 10. Switching Waveform Test Circuit
Fig 11. Switching Test Waveform Times
trr
trr
Qrr= id dt
∫Ic tx
tx
10% Vcc
Vpk
Irr
Diode Reverse
Recovery Energy
t1
10% Irr
Vcc
Diode Recovery
Waveforms
∫ t2
Erec= id dt
t1
t2
Fig 12. Body Diode Recovery Waveform
+
800V
-
42.3μf
856μH
CMF10120D
D.U.T.
CMF10120D
Fig 13. Body Diode Recovery Test
5 CPMF-1200-S160B Rev. -
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CPMF-1200-S160B.PDF ] |
Número de pieza | Descripción | Fabricantes |
CPMF-1200-S160B | Silicon Carbide MOSFET | CREE |
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