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IXFH50N30Q3 の電気的特性と機能

IXFH50N30Q3のメーカーはIXYSです、この部品の機能は「Power MOSFETs Q3-Class」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFH50N30Q3
部品説明 Power MOSFETs Q3-Class
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFH50N30Q3 Datasheet, IXFH50N30Q3 PDF,ピン配置, 機能
www.DataSheet.co.kr
HiperFETTM
Power MOSFETs
Q3-Class
Advance Technical Information
IXFT50N30Q3
IXFH50N30Q3
VDSS =
ID25 =
RDS(on)
300V
50A
80mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
300
300
± 20
± 30
50
150
50
1.5
V
V
V
V
A
A
A
J
50
690
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
4.0
6.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
300 V
3.5 6.5 V
±100 nA
10 μA
500 μA
80 mΩ
TO-268 (IXFT)
G
S
D (Tab)
TO-247 (IXFH)
GDS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Low Intrinsic Gate Resistance
z International Standard Packages
z Low Package Inductance
z Fast Intrinsic Rectifier
z Low RDS(on) and QG
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z Temperature and Lighting Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS100336(05/11)
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





IXFH50N30Q3 pdf, ピン配列
www.DataSheet.co.kr
Fig. 1. Output Characteristics @ TJ = 25ºC
50
VGS = 10V
45
40
35 9V
30
25
8.5V
20
15 8V
10
5 7V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
50
45 VGS = 10V
40
9V
35
30
25 8V
20
15
7V
10
5 6V
0
0123456789
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 25A Value vs.
Drain Current
3.0
2.8 VGS = 10V
2.6
2.4
2.2 TJ = 125ºC
2.0
1.8
1.6
1.4
1.2 TJ = 25ºC
1.0
0.8
0
10 20 30 40 50 60
ID - Amperes
70
IXFT50N30Q3
IXFH50N30Q3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
90
VGS = 10V
80
70
9.5V
60
50
9V
40
30 8.5V
20
10
0
0
8V
7V
5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 25A Value vs.
Junction Temperature
3.0
VGS = 10V
2.6
2.2
I D = 50A
1.8
I D = 25A
1.4
1.0
0.6
0.2
-50
60
-25 0
25 50 75 100 125
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
150
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
Datasheet pdf - http://www.DataSheet4U.net/


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部品番号部品説明メーカ
IXFH50N30Q3

Power MOSFETs Q3-Class

IXYS
IXYS


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