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PDF 1N5408 Data sheet ( Hoja de datos )
| Número de pieza | 1N5408 | |
| Descripción | Standard Recovery Diodes | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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 1. 3A, 1000V, Diode - Fairchild  Hay una vista previa y un enlace de descarga de 1N5408 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Naina Semiconductor Ltd.
1N5408
Features
• Diffused junction
• High efficiency
• Low forward voltage drop
• Low power loss
• High surge current capability
General Purpose Rectifier, 3.0A
Mechanical Characteristics
• Case: Molded Plastic
• Cathode indicated by Polarity band
• Mounting position: Any
• Terminals: Finish Tin plated, Solderable per
MIL-STD-202, Method 208
• Weight: 0.33 grams (approx.)
DO-201AD (DO-27)
Maximum Ratings (TA = 250C unless otherwise specified)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output current @ TA = 1050C
Peak forward surge current (8.3ms) single half sine-wave
superimposed on rated load
Symbol
VRRM
VRMS
VDC
IF(AV)
IFSM
1N5402
1000
700
1000
3.0
200
Units
V
V
V
A
A
Electrical Characteristics (TA = 250C unless otherwise specified)
Parameters
Maximum DC forward voltage drop @ 3.0A DC
Maximum DC reverse current @ rated DC blocking TA = 250C
voltage
TA = 1000C
Rating for fusing (t < 8.3ms)
Symbol
VF
IR
I2t
1N5402
1.0
5.0
50
3.7
Units
V
µA
A2sec
Thermal and Mechanical Specifications (TA = 250C unless otherwise specified)
Parameters
Symbol
Typical thermal resistance, junction to ambient
RθJA
Operating and Storage temperature range
TJ , TStg
Values
25
- 65 to + 150
Units
0C/W
0C
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N5408.PDF ] | |
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