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PDF IRGPS4067DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGPS4067DPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97736
INSULATED GATE BIPOLAR TRANSISTOR WITH
IRGPS4067DPbF
ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
5μs SCSOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
C
G
E
n-channel
VCES = 600V
IC(Nominal) = 120A
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.70V
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
C
E
GC
Super-247
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
240g
160g
120
360
480
240
160
480
±20
±30
750
375
-55 to +175
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.20
0.63
–––
40
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
10/18/11
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25
20
15 ICE = 6.0A
ICE = 120A
10 ICE = 195A
5
0
5 10 15
VGE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
30000
20
25000
20000
15000
EON
10000
5000
EOFF
0
0 50 100 150 200 250
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 66μH; VCE = 400V, RG = 4.7; VGE = 15V
30000
25000
IRGPS4067DPbF
350
300
TJ = -40°C
250 TJ = 25°C
TJ = 175°C
200
150
100
50
0
3 4 5 6 7 8 9 10 11 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
1000
tdOFF
100 tdON
tF
10
0
tR
50
100 150 200 250
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 66μH; VCE = 400V, RG = 4.7; VGE = 15V
10000
20000
15000
10000
EON
5000
EOFF
1000
tdOFF
tdON
100
tF
tR
0
0 20 40 60 80 100
Rg ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 66μH; VCE = 400V, ICE = 120A; VGE = 15V
10
0
20 40 60 80 100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 66μH; VCE = 400V, ICE = 120A; VGE = 15V
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRGPS4067DPBF.PDF ] | |
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