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PDF IXGH48N60C3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH48N60C3D1 | |
| Descripción | GenX3 600V IGBT | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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GenX3TM 600V IGBT
with Diode
IXGH48N60C3D1
High speed PT IGBT for
40-100kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ID110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque
Maximum Ratings
600
600
V
V
±20 V
±30 V
75 A
48 A
30 A
250 A
30 A
300 mJ
ICM = 100
@VCE < 600
300
A
V
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
6
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
TJ
1
=
125°C
Characteristic Values
Min. Typ. Max.
3.0 5.5 V
300 μA
1.75 mA
±100 nA
2.3 2.5 V
1.8 V
VCES
IC110
VCE(sat)
tfi(typ)
= 600V
= 48A
≤ 2.5V
= 38ns
TO-247
GC
E
( TAB )
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Anti-Parallel Ultra Fast Diode
z Fast Switching
z Avalanche Rated
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2009 IXYS CORPORATION, All rights reserved
DS99945A(01/09)
Datasheet pdf - http://www.DataSheet4U.net/
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2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Eoff Eon - - - -
TJ = 125ºC , VGE = 15V
VCE = 400V
I C = 60A
I C = 30A
I C = 15A
5 10 15 20 25 30
RG - Ohms
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
35
Fig. 14. Inductive Swiching
Energy Loss vs. Junction Temperature
2.0 2.0
1.8 Eoff
Eon - - - -
1.6
RG = 3Ω , VGE = 15V
VCE = 400V
1.4
I C = 60A
1.8
1.6
1.4
1.2 1.2
1.0 1.0
0.8 I C = 30A 0.8
0.6 0.6
0.4 0.4
0.2 0.2
I C = 15A
0.0 0.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
140
130
120
110
100
90
80
70
60
50
40
30
20
15
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
t f td(off) - - - -
RG = 3Ω , VGE = 15V
VCE = 400V
TJ = 125ºC
TJ = 25ºC
20 25 30 35 40 45 50 55
IC - Amperes
110
105
100
95
90
85
80
75
70
65
60
55
50
60
© 2009 IXYS CORPORATION, All rights reserved
IXGH48N60C3D1
Fig. 13. Inductive Swiching
Energy Loss vs. Collector Current
2.0
1.8 Eoff
Eon - - - -
RG = 3Ω , VGE = 15V
1.6 VCE = 400V
1.4
1.2
1.0
TJ = 125ºC, 25ºC
0.8
0.6
0.4
0.2
0.0
15 20 25 30 35 40 45 50 55
IC - Amperes
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
60
130
125
120
115
110
105
100
95
90
85
80
75
70
0
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
350
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 400V
325
300
275
I C = 60A
250
225
I C = 30A
200
175
I C = 15A
150
125
100
75
50
5 10 15 20 25 30 35
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
160 120
t f td(off) - - - -
140
RG = 3Ω , VGE = 15V
120
VCE = 400V
110
100
100
I C = 60A
90
80
I C = 30A
60
40
I C = 15A
80
70
60
20 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Datasheet pdf - http://www.DataSheet4U.net/
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