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PDF IXGX28N140B3H1 Data sheet ( Hoja de datos )
| Número de pieza | IXGX28N140B3H1 | |
| Descripción | GenX3 1400V IGBTs w/ Diode | |
| Fabricantes | IXYS Corporation | |
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GenX3TM 1400V
IGBTs w/ Diode
Avalanche Rated
IXGH28N140B3H1
IXGX28N140B3H1
IXGK28N140B3H1
VCES =
IC110 =
VCE(sat) ≤
1400V
28A
3.60V
TO-247 (IXGH)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
1400
1400
±20
±30
V
V
V
V
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
TC = 25°C
60
28
15
150
28
360
ICM = 120
@ VCES < VCE
300
-55 ... +150
A
A
A
A
A
mJ
A
W
°C
150
-55 ... +150
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300 °C
260 °C
Mounting Torque (IXGH & IXGK)
Mounting Force (IXGX)
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
TO-247 & PLUS247
TO-264
6g
10 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
Note 2, TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = IC110, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
50 μA
1 mA
±100 nA
3.00 3.60 V
3.05
G
CE
PLUS247 (IXGX)
Tab
G
C
E
TO-264 (IXGK)
Tab
G
C
E
G = Gate
C = Collector
Tab
E = Emitter
Tab = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z Avalanche Rated
z Anti-Parallel Ultra Fast Diode
z High Current Handling Capability
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
© 2010 IXYS CORPORATION, All Rights Reserved
DS99736A(11/10)
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Fig. 7. Transconductance
28
24
20
16
TJ = - 40ºC
25ºC
12 125ºC
8
16
14
VCE = 600V
I C = 28A
12 I G = 10mA
10
8
6
4
Fig. 8. Gate Charge
42
0
0 20 40 60 80 100 120
IC - Amperes
0
0 10 20 30 40 50 60 70 80 90
QG - NanoCoulombs
10,000
f = 1 MHz
Fig. 9. Capacitance
1,000
Cies
Coes
100
10
0
Cres
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 10. Reverse-Bias Safe Operating Area
140
120
100
80
60
40 TJ = 125ºC
RG = 5Ω
20 dv / dt < 10V / ns
0
200 400 600
800 1000
VCE - Volts
1200
1400
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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