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IXZ4DF12N100 の電気的特性と機能

IXZ4DF12N100のメーカーはIXYS Corporationです、この部品の機能は「RF Power MOSFET & DRIVER」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXZ4DF12N100
部品説明 RF Power MOSFET & DRIVER
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXZ4DF12N100 Datasheet, IXZ4DF12N100 PDF,ピン配置, 機能
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IXZ4DF12N100
RF Power MOSFET & DRIVER
Driver / MOSFET Combination
DEIC-515 Driver combined with a DE375-102N12A MOSFET
Gate driver matched to MOSFET
1000 Volts
12 A
0.7 Ohms
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power cycling capability
IXYS advanced Z-MOS process
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other hazardous materials
Built using the advantages and compatibility of CMOS and IXYS
HDMOS™ processes
Latch-Up Protected
Low Quiescent Supply Current
Advantages
Optimized for RF and high speed
Easy to mount—no insulators needed
High power density
Single package reduces size and heat sink area
Applications
• Class D or E Switching
Amplifier
• Multi MHz Switch Mode
Power Supplies (SMPS)
Description
The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically
designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications. The IXZ4DF12N100 in
pulse mode can provide 72A of peak current while producing voltage rise and fall times of less than 5ns, and
minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire operating
range. Designed with small internal delays, the IXZ4DF12N100 is suitable for higher power operation where
combiners are used. Its features and wide safety margin in operating voltage and power make the
IXZ4DF12N100 unmatched in performance and value.
The IXZ4DF12N100 is packaged in DEIs low inductance RF package incorporating DEI's RF layout techniques
to minimize stray lead inductances for optimum switching performance. The IXZ4DF12N100 is a surface-
mountable device.
Figure 1.
Functional Diagram
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IXZ4DF12N100
RF Power MOSFET & DRIVER
Fig. 2
Extended Output Characteristics @ 25°C
50
40 VGS = VCC = 15V and 20V
30
20 VGS = VCC = 8V
10
0
0
50 100
VDS (V)
150
Fig. 3
2.5
2
1.5
1
0.5
0
20
RDS(ON) vs. Tem perature
ID = 0.5IDM
70 120
Temperature (C)
170
Fig. 4 Propagation Delay ON vs. Supply Voltage
ID = 0.5IDM
25
23
21
19
17
15
5
10 15 20
VCC / VCCIN / IN (V)
25
Fig. 5
28.5
Propagation Delay OFF vs. Supply Voltage
28
27.5
5
10 15 20
VCC / VCCIN / IN (V)
25
Fig. 6
Propagation Delay ON vs.Temperature
ID = 0.5 IDM, VCC / VCCIN / IN = 15V
Fig. 7
Propagation Delay OFF vs. Temperature
ID = 0.5 IDM, VCC / VCCIN / IN = 15V
19 33
32
18.5
31
18 30
17.5 29
17 28
27
16.5 26
16
20
70 120 170
25
20
70 120 170
Temperature (°C)
Temperature °C
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IXZ4DF12N100 電子部品, 半導体
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IXZ4DF12N100
RF Power MOSFET & DRIVER
Lead Description
SYMBOL FUNCTION
Drain MOSFET Drain Drain of Power MOSFET.
DESCRIPTION
Source MOSFET Source Source of Power MOSFET. This connection is common to DGND.
VCC
Driver Section
Supply Voltage
Power supply input for the driver output section. These leads provide power to the output
section of the DEIC515 driver. Both leads must be connected.
VCCIN
Input Section
Supply Voltage
Input for the positive input section power-supply voltage. This lead provides power to the
input section of the DEIC515 driver. This lead should not be directly connected to VCC.
IN
DGND
Input
Power Driver
Ground
Input signal.
The system ground leads. Internally connected to all circuitry, these leads provide ground
reference for the entire chip. These leads should be connected to a low noise analog
ground plane for optimum performance.
INGND
The input section ground lead. This lead is a Kelvin connection internally connected to
Input Section DGND. This lead must not be connected to DGND as excessive current can damage this
Ground lead.
IXYS RF reserves the right to change limits, test conditions and dimensions without notice.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585
6,731,002
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部品番号部品説明メーカ
IXZ4DF12N100

RF Power MOSFET & DRIVER

IXYS Corporation
IXYS Corporation


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