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C4793 の電気的特性と機能

C4793のメーカーはToshiba Semiconductorです、この部品の機能は「NPN Transistor - 2SC4793」です。


製品の詳細 ( Datasheet PDF )

部品番号 C4793
部品説明 NPN Transistor - 2SC4793
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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C4793 Datasheet, C4793 PDF,ピン配置, 機能
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4793
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC4793
Unit: mm
High transition frequency: fT = 100 MHz (typ.)
Complementary to 2SA1837
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
VCBO
VCEO
VEBO
IC
IB
PC
230 V
230 V
5V
1A
0.1 A
2.0
W
20
JEDEC
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10

1 Page





C4793 pdf, ピン配列
IC – VCE
1.0
20 10
8
0.8
6
0.6
4
0.4
IB = 2 mA
0.2
Common emitter
Tc = 25°C
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
1000
500
300
VCE (sat) – IC
Common emitter
VCE = 5 V
Tc = 100°C
100
25
50 25
30
10
0.003
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
2SC4793
IC – VBE
1.0
0.8
0.6 Tc = 100°C 25 25
0.4
0.2
Common emitter
VCE = 5 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
VCE (sat) – IC
1
Common emitter
0.5 IC/IB = 10
0.3
Tc = 100°C
25
0.1
0.05
0.03
25
0.01
0.003
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
fT – IC
500
300 Common emitter
VCE = 10 V
Tc = 25°C
100
50
30
10
5 10 30 100 300
Collector current IC (mA)
1000
Safe Operating Area
5
3
IC max (pulsed)*
IC max (continuous)
1
1 ms*
10 ms*
100 ms*
0.5
DC operation
0.3 Tc = 25°C
0.1
0.05
0.03
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.01
1 3 10 30
VCEO max
100 300
Collector-emitter voltage VCE (V)
3 2006-11-10


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共有リンク

Link :


部品番号部品説明メーカ
C4793

NPN Transistor - 2SC4793

Toshiba Semiconductor
Toshiba Semiconductor


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