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AO4407A
30V P-Channel MOSFET
General Description
The AO4407A uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
* RoHS and Halogen-Free Complaint
Product Summary
VDS = -30V
ID = -12A
(VGS = -20V)
RDS(ON) < 11mΩ (VGS = -20V)
RDS(ON) < 13mΩ (VGS = -10V)
RDS(ON) < 17mΩ (VGS = -6V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current G
Repetitive avalanche energy L=0.3mH G
ID
IDM
IAR
EAR
Power Dissipation A
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
-30
±25
-12
-10
-60
-26
101
3.1
2.0
-55 to 150
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady State
Steady State
Symbol
RθJA
RθJL
Typ
32
60
17
Max
40
75
24
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev.11.0 June 2013
www.aosmd.com
VDC
Vgs
Ig
Gate Charge Test Circuit & W aveform
Vgs
-10V
Qg
VDC
DUT
Vds
Qgs
Qgd
Vds
Vgs
Rg
Vgs
Resistive Switching Test Circuit & Waveforms
RL
Vgs
ton
td(on) tr
toff
td(off)
tf
DUT
Vdd
VDC
Vds
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L EAR= 1/2 LIAR
Vgs
DUT
Vds
Vdd
VDC
Id
Vgs
B VD SS
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Vgs
Q rr = - Idt
+
Vdd
VDC
-
-Isd
-Vds
-I F trr
dI/dt
-IRM
Vdd
Rev.11.0 June 2013
www.aosmd.com