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PDF IRFHS9301PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHS9301PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
VGS max
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TC = 25°C)
-30
±20
37
13
d-8.5
V
V
mΩ
nC
A
TOP VIEW
IRFHS9301PbF
HEXFET® Power MOSFET
D1
D2
G3
6D
D 5D
S 4S
D
D
DG
D
D
S
S
2mm x 2mm PQFN
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
Features and Benefits
Features
Low RDSon (≤ 37mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS9301TRPBF
IRFHS9301TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4000
400
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @ TA = 70°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-30
± 20
-6.0
-4.8
-13d
-10d
d-8.5
-52
2.1
1.3
0.02
-55 to + 150
Note
EOL notice # 259
Units
V
A
W
W/°C
°C
Notes through
are on page 2
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 21, 2014
1 page  
IRFHS9301PbF
100 100
ID = -7.8A
Vgs = -4.5V
80 80
60 60
40 TJ = 125°C
TJ = 25°C
20
0
5 10 15 20
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
600
40 Vgs = -10V
20
0
5 10 15 20 25 30
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
500
400
300
200
100
0
1E-5
1E-4
1E-3 1E-2
Time (sec)
1E-1
Fig 14. Typical Power vs. Time
1E+0
D.U.T * +
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
+ Current Transformer
-
- +
RG
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
IInnductorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
VDD
ISD
* Reverse Polarity of D.U.T for P-Channel
* VGS = 5V for Logic Level Devices
Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 21, 2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFHS9301PBF.PDF ] | |
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