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PDF IRFHS8242PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHS8242PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
VGS max
RDS(on) max
(@VGS = 10V)
Qg (typical)
( @ VGS = 4.5V)
ID
(@Tc(Bottom) = 25°C)
Applications
• System/Load Switch
25
±20
13.0
4.3
d8.5
V
V
mΩ
nC
A
Features and Benefits
Features
Low RDSon (≤ 13.0mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
TOP VIEW
IRFHS8242PbF
HEXFET® Power MOSFET
D1
D2
G3
6D
D 5D
S 4S
D
D
DG
D
D
S
S
2mm x 2mm PQFN
results in
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS8242TRPbF
IRFHS8242TR2PbF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom)= 70°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
fLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
25
±20
9.9d
8.0
21d
17d
8.5d
84
2.1
1.3
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 2
1 www.irf.com © 2013 International Rectifier
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December 17, 2013
1 page  
IRFHS8242PbF
35
ID = 8.5A
30
25
20 TJ = 125°C
15
10
5 TJ = 25°C
0
0 5 10 15 20
Fig
12.
OVGnS-R, Geastiest-aton-cSeouvrcse.
Voltage (V)
Gate Voltage
600
30
25
Vgs = 4.5V
20
15
Vgs = 10V
10
5
0 20 40 60 80 100
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
500
400
300
200
100
0
1E-5
1E-4
1E-3 1E-2
Time (sec)
1E-1
1E+0
Fig 14. Typical Power vs. Time
+
-
RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD +
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
*VGS=10V
VDD
ISD
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
5 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 17, 2013
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFHS8242PBF.PDF ] | |
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