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IRFB20N50KPBF の電気的特性と機能

IRFB20N50KPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB20N50KPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB20N50KPBF Datasheet, IRFB20N50KPBF PDF,ピン配置, 機能
www.DataSheet.co.kr
PD - 94984
IRFB20N50KPbF
SMPS MOSFET HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
VDSS
500V
RDS(on) typ.
0.21
ID
20A
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
l Low RDS(on)
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Max.
20
12
80
280
2.2
± 30
6.9
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
N
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
330
20
28
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
58
Units
°C/W
www.irf.com
1
2/5/04
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





IRFB20N50KPBF pdf, ピン配列
www.DataSheet.co.kr
IRFB20N50KPbF
100 VGS
TOP 15V
12V
10V
8.0V
10
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
0.01
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100 VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
10
5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.0
10.0
TJ = 150°C
1.0 TJ = 25°C
0.1
0.0
5.0
VDS = 50V
20µs PULSE WIDTH
6.0 7.0 8.0 9.0
VGS , Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5
ID = 20A
3.0
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
Datasheet pdf - http://www.DataSheet4U.net/


3Pages


IRFB20N50KPBF 電子部品, 半導体
www.DataSheet.co.kr
IRFB20N50KPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
600
ID
TOP
9.4A
500 17A
BOTTOM
20A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
Datasheet pdf - http://www.DataSheet4U.net/

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFB20N50KPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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