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2SB1411 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SB1411
部品説明 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 

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2SB1411 Datasheet, 2SB1411 PDF,ピン配置, 機能
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1411
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
2SB1411
Unit: mm
High DC current gain: hFE = 1500 (min) (VCE = 3 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO 7 V
Collector current
DC
Peak
IC
2
A
ICP 3
Base current
IB 0.5 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
7 k
150
Emitter
1 2006-11-21

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