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IRHMS67264 の電気的特性と機能

IRHMS67264のメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET THRU-HOLE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHMS67264
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHMS67264 Datasheet, IRHMS67264 PDF,ピン配置, 機能
www.DataSheet.co.kr
PD-96991
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level
IRHMS67264 100K Rads (Si)
IRHMS63264 300K Rads (Si)
RDS(on)
0.041
0.041
ID
45A
45A
IRHMS67264
250V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Low-Ohmic
TO-254AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
45
28.5
A
180
208 W
1.67
W/°C
±20 V
251 mJ
45 A
20.8
mJ
4.4
-55 to 150
V/ns
oC
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
06/28/05
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IRHMS67264 pdf, ピン配列
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PRraed-IirartaiodniaCtiohnaracteristics
IRHMS67264
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si) Units
Min Max
Test Conditions ˆ
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Sourcee On-State „
Resistance (Low Ohmic TO-254AA)
250
2.0
4.0
100
-100
10
0.041
0.041
V
nA
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 200V, VGS= 0V
VGS = 12V, ID = 28.5A
VGS = 12V, ID = 28.5A
VSD Diode Forward Voltage „
— 1.2 V
VGS = 0V, ID = 45A
Part numbers IRHMS67264 and IRHMS63264
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables.
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range
(MeV/(mg/cm2)) (MeV)
(µm)
@VGS = @VGS =
0V -5V
Ag 43
1217 112 250 250
Xe 59
823 66 250 250
Au 90
1480
80
75
75
VDS (V)
@VGS = @VGS =
-10V
-15V
250 250
250 50
--
@VGS =
-17V
100
-
-
@VGS =
-20V
50
-
-
300
250
200
150
100
50
0
0
-5 -10 -15
VGS
-20
Ag
Xe
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
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IRHMS67264 電子部品, 半導体
www.DataSheet.co.kr
IRHMS67264
Pre-Irradiation
50
40
30
20
10
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com
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共有リンク

Link :


部品番号部品説明メーカ
IRHMS67260

(IRHMS6x260) RADIATION HARDENED POWER MOSFET THRU-HOLE

International Rectifier
International Rectifier
IRHMS67264

RADIATION HARDENED POWER MOSFET THRU-HOLE

International Rectifier
International Rectifier


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