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2SD0874A の電気的特性と機能

2SD0874AのメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon NPN epitaxial planar type」です。


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部品番号 2SD0874A
部品説明 Silicon NPN epitaxial planar type
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 




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2SD0874A Datasheet, 2SD0874A PDF,ピン配置, 機能
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Transistors
2SD0874, 2SD0874A (2SD874, 2SD874A)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A)
Unit: mm
Features
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage
(Emitter open)
2SD0874 VCBO
2SD0874A
30
60
V
Collector-emitter voltage 2SD0874 VCEO
(Base open)
2SD0874A
25
50
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC 1 A
Peak collector current
ICP 1.5
A
Collector power dissipation *
PC 1 W
Junction temperature
Tj 150 °C
Storage temperature
Tstg 55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
1
0.4±0.08
1.5±0.1
23
0.5±0.08
0.4±0.04
3.0±0.15
45˚
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol:
2SD0874: Z
2SD0874A: Y
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
2SD0874 VCBO IC = 10 µA, IE = 0
30
V
(Emitter open)
2SD0874A
60
Collector-emitter voltage
(Base open)
2SD0874 VCEO
2SD0874A
IC = 2 mA, IB = 0
25 V
50
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *1
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VEBO
ICBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IC = 500 mA
VCE = 5 V, IC = 1 A
IC = 500 mA, IB = 50 mA
IC = 500 mA, IB = 50 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
5
85
50
0.1
340
0.2 0.4
0.85 1.2
200
20
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240 170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: November 2002
SJC00197CED
1

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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL


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部品番号部品説明メーカ
2SD0874

Silicon NPN epitaxial planar type

Panasonic Semiconductor
Panasonic Semiconductor
2SD0874A

Silicon NPN epitaxial planar type

Panasonic Semiconductor
Panasonic Semiconductor


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