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PDF HP147T Data sheet ( Hoja de datos )
| Número de pieza | HP147T | |
| Descripción | PNP SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN ELECTRONIC DEVICES | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HP147T (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP DARLINGTON TRANSISTOR
HP147T
█ APPLICATIONS
High DC Current Gain
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation（Tc=25℃）…………………… 80W
VCBO——Collector-Base Voltage………………………… -100V
VCEO——Collector-Emitter Voltage……………………… -100V
VEBO——Emitter-Base Voltage……………………………… -5V
IC——Collector Curren（t DC）……………………………… -10A
IB——Base Current…………………………………………-0.5A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
BVCEO(SUS)
ICEO
ICBO
IEBO
HFE（1）
HFE（2）
VCE(sat1)
VCE(sat2)
VBE(sat)
VBE(on)
tD
tR
tS
tF
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base- Emitter On Voltage
Deiay time
Rise Time
Storage Time
Fall Time
Min Typ Max Unit
Test Conditions
-100
1000
500
V IC=-30mA, IB=0
-2 mA VCE=-50V, IB=0
-1 mA VCB=-100V, IE=0
-2 mA VEB=-5V, IC=0
VCE=-4V, IC=-5A
VCE=-4V, IC=-10A
-2 V IC=-5A, IB=-10mA
-3 V IC=-10A, IB=-40mA
-3.5 V IC=-10A, IB=-40mA
-3 V VCE=-4V,IC=-10A,
0.15
0.55
2.5
uS
uS
Vcc=-30V,Ic=-5A
IB1=-20mA
uS IB2=20mA
2.5 uS
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HP147T.PDF ] | |
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