64N50P Datasheet PDF - IXYS Corporation
| Part Number | 64N50P | |
| Description | IXFN64N50P | |
| Manufacturers | IXYS Corporation | |
| Logo |  |
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PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Preliminary Data Sheet
IXFN 64N50P
V = 500 V
DSS
ID25 = 64 A
≤RDS(on) 85 mΩ
trr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGSS
VGSM
ID25
I
DM
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
Md
V
ISOL
M
d
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
Mounting torque
50/60 Hz
t = 1 min
IISOL ≤ 1 mA
Mounting torque
t=1s
Terminal connection torque (M4)
SOT-227B
500 V
500 V miniBLOC, SOT-227 B (IXFN)
E153432
±30 V
S
±40 V
G
64 A
150 A
64 A
S
70 mJ
G = Gate
D
D = Drain
2.0 J S = Source
20 V/ns Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
700 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Features
z International standard packages
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 8 mA
2.5 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
85 m Ω
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99349(02/05)
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| Information | Total 2 Pages | |
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| Download | [ 64N50P.PDF Datasheet ] | |
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