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PDF H445CHXX Data sheet ( Hoja de datos )
| Número de pieza | H445CHXX | |
| Descripción | PHASE CONTROL THYRISTOR | |
| Fabricantes | Hind Rectifiers | |
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PHASE CONTROL THYRISTOR H445CHXX
Symbol
Characteristics
Conditions
TJ
(0C)
Value
Unit
BLOCKING PARAMETERS
VRRM
VDRM
IRRM
IDRM
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
CONDUCTING PARAMETERS
V = VRRM
V = VRRM
125 200-1600
125 200-1600
125 50
125 50
V
V
mA
mA
IF(AV)
IRMS
ITSM
I2t
VT
V0
R0
Average on-state current
RMS on-state current
Surge on-state current
I2t
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
180 sine, 50H Z,
TC = 690C
Sine wave,
10mS without
reverse voltage
On-state
current = 1.2kA
125
125
125
125
445
700
4.60
106
2.07
0.85
0.90
A
A
kA
kA2S
V
V
mΩ
TRIGGERING PARAMETERS
IGT
VGT
IL
PG–PEAK
di/dt
VFGM
IFGM
Gate trigger current
Gate trigger voltage
Latching Current
Maximum Peak Gate Power
Repetitive rate of rise of current
Maximum forward gate voltage
Maximum forward gate current
VD = 5V
VD = 5V
Pulse width
100μSec
25
25
25
200
2.00
600
150
150
12
30
mA
V
mA
W
A/μSec
V
A
THERMAL & MECHANICAL PARAMETERS
R TH (J-C)
RTH (C-HK)
TJ
TSTG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to
heatsink
0.068
0.015
125
-40 - 125
5
70
0C/W
0C/W
0C
0C
KN
gms
HIND RECTIFIERS LTD
1 of 6
1 page  
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PHASE CONTROL THYRISTOR H445CHXX
On State Characteristics
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0 0.5 1 1.5 2 2.5 3 3.5
Vt (V)
Gate Trigger Characteristics
100
10
1
0.1
0.01
250C
150W
(0.1mS)
0.1 1 10
IG (av) - A
100
HIND RECTIFIERS LTD
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet H445CHXX.PDF ] | |
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