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H04N60 の電気的特性と機能

H04N60のメーカーはHi-Sincerity Mocroelectronicsです、この部品の機能は「N-Channel Power Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 H04N60
部品説明 N-Channel Power Field Effect Transistor
メーカ Hi-Sincerity Mocroelectronics
ロゴ Hi-Sincerity Mocroelectronics ロゴ 




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H04N60 Datasheet, H04N60 PDF,ピン配置, 機能
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 1/5
H04N60 Series
N-Channel Power Field Effect Transistor
Description
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high energy
device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as
power suplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Absolute Maximum Ratings
H04N60 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H04N60 Series
Symbol:
G
S
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Derate above 25°C
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
4
16
±30
70
30
0.56
0.2
-55 to 150
250
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H04N60E, H04N60F
HSMC ProdwuwctwS.pDeactiafiSchaetieotn4U.net

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H04N60 pdf, ピン配列
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 3/5
10
9
8
7
6
5
4
3
2
1
0
0
On-Region Characteristic
VGS=8V
VGS=10V
VGS=6V
VGS=5V
VGS=4V
2468
VDS, Drain-Source Voltage (V)
10
Capacitance Characteristics
1000
800
600
Crss
400
200
Ciss
Coss
0
0.1 1 10
VDS, Deain-Source Voltage (V)
100
On Resistance Variation with Temperature
2.500
2.400
2.300
2.200
VGS=10V
2.100
2.000
1.900
ID=3A
1.800
1.700
1.600
1.500
0
25 50 75 100 125
TC, Case Temperature (oC)
150
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
0
Typical On-Resistance & Drain Current
VGS=10V
VGS=15V
1 2 3 4 5 6 7 8 9 10 11 12
ID, Drain Current (A)
H04N60E, H04N60F
Drain Current Variation with Gate Voltage and
Temperature
6
VDS=10 V
5
Tc=25oC
4
3
2
1
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-Source Voltage (V)
Maximum Safe Operating Area
10
1ms
100ms
1
10ms
0.1
10
100
VDS, Drain-Source Voltage (V)
1000
HSMC ProdwuwctwS.pDeactiafiSchaetieotn4U.net


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部品番号部品説明メーカ
H04N60

N-Channel Power Field Effect Transistor

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics


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