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07N60C2 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 07N60C2
部品説明 SPA07N60C2
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 



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07N60C2 Datasheet, 07N60C2 PDF,ピン配置, 機能
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Final data
SPP07N60C2, SPB07N60C2
SPA07N60C2
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Product Summary
VDS @ Tjmax 650
RDS(on)
0.6
ID 7.3
V
A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Type
SPP07N60C2
SPB07N60C2
SPA07N60C2
P-TO220-3-31
3
12
Package
Ordering Code
P-TO220-3-1 Q67040-S4309
P-TO263-3-2 Q67040-S4310
P-TO220-3-31 Q67040-S4331
Marking
07N60C2
07N60C2
07N60C2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IS = 7.3 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Page 1
Symbol
Value
SPP_B SPA
ID
7.3 7.31)
4.6 4.61)
ID puls
EAS
14.6
230
14.6
230
Unit
A
A
mJ
EAR 0.5 0.5
IAR 7.3 7.3 A
dv/dt
6
6 V/ns
VGS
VGS
Ptot
Tj , Tstg
±20 ±20 V
±30 ±30
83 32 W
-55...+150
°C
20w0w2w-.D0a8ta-S1h2eet4U.net

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