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PDF ISP1040B Data sheet ( Hoja de datos )
| Número de pieza | ISP1040B | |
| Descripción | SCSI I/O Processor | |
| Fabricantes | Qlogic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ISP1040B (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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Construction Analysis
Qlogic ISP1040B
SCSI I/O Processor
Report Number: SCA 9710-557
www.DataSheet4U.net
al Semiconductor Ind
®
17350 N. Hartford Drive
Scottsdale, AZ 85255
Phone: 602-515-9780
Fax: 602-515-9781
e-mail: [email protected]
Internet: http://www.ice-corp.com
1 page  
TECHNOLOGY DESCRIPTION (continued)
• Intermetal dielectrics (IMD2 and IMD1): Both interlevel dielectrics consisted of
multiple layers of deposited glass with an SOG (spin on glass) between for
planarization.
• Pre-metal glass: A single layer of CVD glass (BPSG) over various densified oxides.
Reflow was done prior to contact cuts.
• Polysilicon: A single layer of dry-etched polycide (poly and tungsten-silicide). This
layer was used to form all gates on the die.
• Diffusions: Standard implanted N+ and P+ diffusions formed the sources/drains of
transistors. Oxide sidewall spacers were used to provide the LDD spacing and were
left in place.
• Isolation: LOCOS (local oxide). A step was noted in the oxide at well boundaries.
• Wells: Twin-wells were employed on a P substrate (no epi was used). The step in
the oxide indicates a twin-well process was employed.
• Memory cells: A 7T SRAM cell design consisting of three polycide select gates, two
polycide storage gates, and two polycide pull-up transistors. Metal 3 was not
directly used in the array. Metal 2 provided bit lines, word line B, and distributed
GND and Vcc. Metal 1 provided cell interconnect and word lines A and C.
Polycide formed all gates.
• Buried contacts: No buried (poly-to-diffusion) contacts were employed.
• No fuses were noted.
• Anti-dishing patterns were employed and power bus lines were slotted and beveled
for stress relief.
-3-
5 Page 
OVERALL QUALITY EVALUATION: Overall Rating: Normal
DETAIL OF EVALUATION
Package integrity
Package markings
Die placement
Die attach quality
Wire spacing
Wirebond placement
Wirebond quality
Dicing quality
Wirebond method
Die attach method
Dicing method
G
G
N
N
N
G
G
G
Thermosonic ball bonds using 1.1 mil
gold wire.
Silver-epoxy
Sawn (full depth)
Die surface integrity:
Toolmarks (absence)
Particles (absence)
Contamination (absence)
Process defects (absence)
General workmanship
Passivation integrity
Metal definition
Metal integrity
Contact coverage
Contact registration
Contact defects
N
N
G
G
N
G
N
N
G
G
G
G = Good, P = Poor, N = Normal, NP = Normal/Poor
-9-
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet ISP1040B.PDF ] | |
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