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IS42S81600A の電気的特性と機能

IS42S81600AのメーカーはIntegrated Circuit Solutionです、この部品の機能は「128-MBIT SYNCHRONOUS DRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS42S81600A
部品説明 128-MBIT SYNCHRONOUS DRAM
メーカ Integrated Circuit Solution
ロゴ Integrated Circuit Solution ロゴ 




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IS42S81600A Datasheet, IS42S81600A PDF,ピン配置, 機能
IS42S81600A, IS42LS81600A
IS42S16800A, IS42LS16800A
IS42S32400A, IS42LS32400A
16Meg x 8, 8Meg x16 & 4Meg x 32
128-MBIT SYNCHRONOUS DRAM
ISSI®
ADVANCED INFORMATION
AUGUST 2002
FEATURES
• Clock frequency: 133 100, MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
IS42LS81600A
VDD VDDQ
2.5V 1.8V (2.5V tolerant)
IS42LS16800A 2.5V 1.8V (2.5V tolerant)
IS42LS32400A
IS42S81600A
2.5V 1.8V (2.5V tolerant)
3.3V 3.3V
IS42S16800A
3.3V 3.3V
IS42S32400A
3.3V 3.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Extended Mode Register
• Programmable Power Reduction Feature by
partial array activation during Self-Refresh
• Auto Refresh (CBR)
• Temp. Compensated Self Refresh.
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
• Industrial Temperature Availability
OVERVIEW
ISSI's 128Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock
input.The 128Mb SDARM is organized as follows.
IS42LS81600A
IS42S81600A
4M x8x4 Banks
54pin TSOPII
IS42LS16800A
IS42S16800A
2M x16x4 Banks
54ball FBGA
54 pin TSOPII
IS42LS32400A
IS42S32400A
2M x16x4 Banks
90ball FBGA
86pin TSOPII
KEY TIMING PARAMETERS
Parameter
Clk Cycle Time
CAS Latency = 3
CAS Latency = 2
Clk Frequency
CAS Latency = 3
CAS Latency = 2
Access Time from Clock
CAS Latency = 3
CAS Latency = 2
Row to Column Delay Time (tRCD)
Row Precharge Tim (tRP)
-7 -10 Unit
7 10 ns
10 10 ns
133 100 Mhz
100 100 Mhz
5.4 7 ns
6 9 ns
15 18 ns
15 18 ns
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
www.DAaDtaVSAhNeCeEt4DUIN.nFeOtRMATION,Rev. 00A
08/01/02
1

1 Page





IS42S81600A pdf, ピン配列
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
PIN CONFIGURATIONS
54 pin TSOP - Type II for x8
ISSI ®
VDD
I/O0
VDDQ
NC
I/O1
VSSQ
NC
I/O2
VDDQ
NC
I/O3
VSSQ
NC
VDD
NC
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54 VSS
53 I/O7
52 VSSQ
51 NC
50 I/O6
49 VDDQ
48 NC
47 I/O5
46 VSSQ
45 NC
44 I/O4
43 VDDQ
42 NC
41 VSS
40 NC
39 DQM
38 CLK
37 CKE
36 NC
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 VSS
PIN DESCRIPTIONS
A0-A11
A0-A8, A10
BA0, BA1
I/O0 to I/O7
CLK
CKE
CS
RAS
CAS
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
Column Address Strobe Command
WE
DQM
VDD
Vss
VDDQ
VssQ
NC
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
ADVANCEDINFORMATION Rev. 00A
06/01/02
Write Enable
x 8 Lower Bye, Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
3


3Pages


IS42S81600A 電子部品, 半導体
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
PIN CONFIGURATIONS
90-Ball FBGA for x32
ISSI ®
123456789
A
I/O26 I/O24
Vss
B
I/O28 VDDQ VssQ
C
VssQ I/O27 I/O25
D
VssQ I/O29 I/O30
E
VDDQ I/O31
NC
F
Vss DQM3 A3
G
A4 A5 A6
H
A7
A8 NC
J
CLK
CKE
A9
K
DQM1
NC
NC
L
VDDQ I/O8
Vss
M
VssQ I/O10
I/O9
N
VssQ I/O12 I/O14
P
I/O11 VDDQ VssQ
R
I/O13 I/O15
Vss
VDD
VDDQ
I/O22
I/O17
NC
A2
A10
NC/A12
BA0
CAS
VDD
I/O6
I/O1
VDDQ
VDD
I/O23 I/O21
Vss I/O19
I/O20 VDDQ
I/O18 VDDQ
I/O16
Vss
DQM2 VDD
A0 A1
BA1
A11
CS RAS
WE DQM0
I/O7 VssQ
I/O5 VDDQ
I/O3 VDDQ
VssQ I/O4
I/O0
I/O2
PIN DESCRIPTIONS
A0-A11
A0-A8, A10
BA0, BA1
I/O0 to I/O31
CLK
CKE
CS
RAS
CAS
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
Column Address Strobe Command
WE
DQM0-DQM3
VDD
Vss
VDDQ
VssQ
NC
Write Enable
x32 Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
ADVANCEDINFORMATION Rev. 00A
06/01/02

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IS42S81600A

16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc
IS42S81600A

128-MBIT SYNCHRONOUS DRAM

Integrated Circuit Solution
Integrated Circuit Solution
IS42S81600A-10T

16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc
IS42S81600A-10TI

16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc


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