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2SA992 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SA992
部品説明 PNP SILICON TRANSISTOR
メーカ NEC
ロゴ NEC ロゴ 

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2SA992 Datasheet, 2SA992 PDF,ピン配置, 機能
NEC
PNP SILICON TRANSISTOR
2SA992
OESCR IPTION
FEATURES
The 2SA992 is best for use as the middle range amplifier in Hi-Fi
stereo control amplifiers; power amplifiers, and etc.
• High Voltage.
VCEO : -120 V
• Low Output Capacitance.
Cob : 2.0 pF TYP. (VCB =-30 V)
• High hFE.
hFE : 500 TYP. (VCE =-6.0 V, Ic =-1.0 mA)
• Super Low Noise. NV : 25 mV TYP. (See test circuit.)
• Complementary to 2SC1845.
PACKAGE DIMENSiONs
in millimeters (inchesl
5.2 MAX.
(0.204 MAX.)
II
ABSOLUTE MAXIMUM RATINGS
Maximum Temp.eratures
Storage Temperature
.. -55to+125°C
Junction Temperature ........
+ 125°C Maximum
Maximum Power Dissipation (Ta = 25°C)
Total Power Dissipation .......
500 mW
Maximum Voltages and Currents (Ta = 25 oe)
VCBO Collector to Base Voltage .
-120 V
VCEO Collector to Emitter Voltage
-120 V
VEBO Emitter to Base Voltage . . . . . . . . . . . . . -5.0 V
Ic Collector Current ................ . -50mA
IB Base Current
-10mA
ELECTRICAL CHARACTERISTICS (Ta =25 °C)
1. EMITTER
EIAJ: SC-43B
2. COLLECTOR JEDEC: TO-92
3. BASE
IEC: PA33
SYMBOL.
hFE1
hFE2
fT
Cob
NV
CHARACTERISTIC
OC Current Gain
OC Current Gain
Gain Bandwidt'h Product
Output Capacitance
Noise Voltage
ICBO
IEBO
VBE
VCE(sat)
Collector Cutoff Current
Emitter Cutoff Current
Base to Emitter Voltage
Collector Saturation Voltage
MIN.
150
200
50
-0.55
TYP.
500
500
100
2.0
25
-0.61
-0.09
MAX.
800
3.0
40
-50
-50
-0.65
-0.30
UNIT
MHz
pF
mV
nA
nA
v
V
TEST CONOITIONS
VCE =-6.0 V, IC =-0.1 mA
VCE =-6.0 V, IC =-1.0 mA
VCE =-6.0 V, IE = 1.0 mA
VCB=-30 V, le=O, f=1.0 MHz
VCE =-5.0 V, IC =-1.0 mA, RG = 100 kn
Gv =80 dB, f=10 Hz to 1.0 kHz
VCB =-120 V, IE =0
VEB =- 5.0 V, IC =0
VCE =-6.0 V, IC =-1.0 mA
IC=-10 mA, IB=-1.0 mA
Classification of hFE2
E
400 - 800
hFE Test Conditions : VCE =-6.0 V, IC=-1.0 mA
125

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