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2SA966のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon PNP Epitaxial Type Transistor」です。 |
部品番号 | 2SA966 |
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部品説明 | Silicon PNP Epitaxial Type Transistor | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SA966ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA966
Audio Power Amplifier Applications
2SA966
Unit: mm
• Complementary to 2SC2236 and 3-W output applications.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−30
−30
−5
−1.5
-0.15
900
150
−55 to 150
V
V
V
A
A
mW
°C
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
JEITA
TO-92MOD
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2009-12-21
1 Page 2SA966
−1600
−1400
−1200
−1000
−800
−600
−400
−200
0
0
IC – VCE
−10
−8
Common emitter
Ta = 25°C
−6
−4
−3
−2
IB = −1 mA
0
−2 −4 −6 −8 −10 −12 −14 −16
Collector-emitter voltage VCE (V)
VCE (sat) – IC
−5
−3 Common emitter
IC/IB = 50
−1
−0.5
−0.3
−0.1
Ta = 100°C
25
−0.05
−0.03
−25
−0.01
−1
−3 −10 −30 −100 −300 −1000 −3000
Collector current IC (mA)
PC – Ta
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180
Ambient temperature Ta (°C)
1000
500
300
100
50
30
hFE – IC
Ta = 100°C
−25
25
10
−1 −3 −10 −30 −100 −300 −1000 −3000
Collector current IC (mA)
−1600
−1400
IC – VBE
Common emitter
VCE = −2 V
−1200
−1000
−800
−600
−400
Ta = 100°C 25 −25
−200
0
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
Base-emitter voltage VBE (V)
Safe Operating Area
−5
IC max (pulsed)*
−3
IC max
(continuous)
100 ms*
10 ms*
1 ms*
−1
−0.5
−0.3
DC operation
Ta = 25°C
1 s*
−0.1
−0.05
−0.03
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.01
−0.3
−1
−3
VCEO max
−10 −30
Collector-emitter voltage VCE (V)
3 2009-12-21
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ 2SA966 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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2SA963 | POWER TRANSISTOR | Inchange Semiconductor |
2SA965 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
2SA966 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |