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2SA966 の電気的特性と機能

2SA966のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon PNP Epitaxial Type Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SA966
部品説明 Silicon PNP Epitaxial Type Transistor
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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2SA966 Datasheet, 2SA966 PDF,ピン配置, 機能
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA966
Audio Power Amplifier Applications
2SA966
Unit: mm
Complementary to 2SC2236 and 3-W output applications.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
30
30
5
1.5
-0.15
900
150
55 to 150
V
V
V
A
A
mW
°C
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
JEITA
TO-92MOD
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2009-12-21

1 Page





2SA966 pdf, ピン配列
2SA966
1600
1400
1200
1000
800
600
400
200
0
0
IC – VCE
10
8
Common emitter
Ta = 25°C
6
4
3
2
IB = 1 mA
0
2 4 6 8 10 12 14 16
Collector-emitter voltage VCE (V)
VCE (sat) – IC
5
3 Common emitter
IC/IB = 50
1
0.5
0.3
0.1
Ta = 100°C
25
0.05
0.03
25
0.01
1
3 10 30 100 300 1000 3000
Collector current IC (mA)
PC – Ta
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180
Ambient temperature Ta (°C)
1000
500
300
100
50
30
hFE – IC
Ta = 100°C
25
25
10
1 3 10 30 100 300 1000 3000
Collector current IC (mA)
1600
1400
IC – VBE
Common emitter
VCE = 2 V
1200
1000
800
600
400
Ta = 100°C 25 25
200
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Base-emitter voltage VBE (V)
Safe Operating Area
5
IC max (pulsed)*
3
IC max
(continuous)
100 ms*
10 ms*
1 ms*
1
0.5
0.3
DC operation
Ta = 25°C
1 s*
0.1
0.05
0.03
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.3
1
3
VCEO max
10 30
Collector-emitter voltage VCE (V)
3 2009-12-21


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共有リンク

Link :


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2SA965

Silicon PNP Epitaxial Type Transistor

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Toshiba Semiconductor


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