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PDF IXTK68N20 Data sheet ( Hoja de datos )
| Número de pieza | IXTK68N20 | |
| Descripción | High Current MegaMOSFET | |
| Fabricantes | IXYS Corporation | |
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High Current
MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 74 N20
IXTH 68 N20
VDSS
200 V
200 V
ID25
74 A
68 A
RDS(on)
35 mW
35 mW
Preliminary data
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 MΩ
Continuous
Transient
TC = 25°C
IDM TC = 25°C, pulse width limited by TJM
PD TC = 25°C
TJ
TJM
Tstg
Md
Weight
Mounting torque
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum ratings
74N20
68N20
74N20
68N20
74N20
68N20
200
200
±20
±30
74
68
296
272
416
300
V
V
V
V
A
A
A
A
W
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-264
TO-247
10
6
g
g
300 °C
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 5 mA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS VGS = ±20 V DC, VDS = 0
IDSS VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
Characteristic Values
Min. Typ.
Max.
200 V
2.0 4.0 V
±100 nA
500 µA
3 mA
35 mΩ
TO-247AD (IXTH)
TO-264 AA (IXTK)
D (TAB)
G
D
S
G = Gate
S = Source
D = Drain
Tab = Drain
D (TAB)
Features
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Applications
Motor controls
DC choppers
Uninterruptable Power Supplies (UPS)
Switch-mode and resonant-mode
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions and dimensions.
C2 - 14
www.DataSheet4U.net
95512C (12/97)
© 1998 IXYS All rights reserved
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTK68N20.PDF ] | |
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