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Número de pieza | 2SB0951A | |
Descripción | Power Transistors | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB0951A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Power Transistors
2SB0951 (2SB951), 2SB0951A (2SB951A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type darlington
For midium-speed switching
Complementary to 2SD1277 and 2SD1277A
■ Features
• High forward current transfer ratio hFE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0951 VCBO
2SB0951A
−60
−80
Collector-emitter voltage 2SB0951 VCEO
(Base open)
2SB0951A
−60
−80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−7
−8
−12
45
2
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
B
C
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0951 VCEO
2SB0951A
IC = −30 mA, IB = 0
−60
−80
V
Collector-base cutoff
current (Emitter open)
2SB0951 ICBO
2SB0951A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = −60 V, IE = 0
VCB = −80 V, IE = 0
VEB = −7 V, IC = 0
VCE = −3 V, IC = −4 A
VCE = −3 V, IC = −8 A
IC = −4 A, IB = −8 mA
IC = −4 A, IB = −8 mA
VCE = −10 V, IC = −1 A, f = 1 MHz
IC = −4 A, IB1 = −8 mA, IB2 = 8 mA
VCC = −50 V
1 000
500
−100
−100
−2
10 000
µA
mA
−1.5 V
−2.0 V
20 MHz
0.5 µs
2.0 µs
1.0 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE1 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00030BED
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SB0951A.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SB0951 | Power Transistors | Panasonic Semiconductor |
2SB0951A | Power Transistors | Panasonic Semiconductor |
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