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PDF U440 Data sheet ( 特性 )

部品番号 U440
部品説明 Low Leakage
メーカ Micross
ロゴ Micross ロゴ 

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U440 Datasheet, U440 PDF,ピン配置, 機能
U440
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U440
The U440 is a tightly matched Monolithic Dual N-Channel JFET
The U440 are monolithic dual JFETs mounted in a
single TO-71 package. The monolithic dual chip design
reduces parasitics and gives better performance at very
high frequencies while ensuring extremely tight
matching. These devices are an excellent choice for
use as wideband differential amplifiers in demanding
test and measurement applications. The U440 is a
direct replacement for discontinued Siliconix U440.
FEATURES 
Direct Replacement for SILICONIX U440 
HIGH CMRR 
LOW GATE LEAKAGE 
ABSOLUTE MAXIMUM RATINGS 1 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
CMRR ≥ 85dB 
IGSS ≤ 1 pA 
The hermetically sealed TO-71 is well suited for military
applications.
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
65°C to +150°C 
55°C to +135°C 
(See Packaging Information).
Continuous Power Dissipation (Total) 
Maximum Currents 
500mW 
Gate Current 
U440 Applications:
ƒ Wideband Differential Amps
ƒ High-Speed,Temp-Compensated Single-
Ended Input Amps
ƒ High-Speed Comparators
ƒ Impedance Converters and vibrations
detectors.
Maximum Voltages 
Gate to Drain 
Gate to Source 
Gate to Gate 
 
 
 
 
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
50mA 
25V 
25V 
±50V 
 
 
 
 
SYMBOL 
CHARACTERISTIC 
MIN  TYP  MAX  UNITS  CONDITIONS 
|VGS1  VGS2 | 
|VGS1  VGS2 | / T 
 
IDSS1  / IDSS2 
 
Click ToGfs1 / Gfs2 
Differential Gate to Source Cutoff Voltage 
Differential Gate to Source Cutoff  
Voltage Change with Temperature 
Gate to Source Saturation Current Ratio 
Forward Transconductance Ratio2 
  
  20 
  0.07 
  0.97 
Buy10  mV  VDG = 10V, ID = 5mA           
  µV/°C  VDG = 10V, ID = 5mA      
TA = ‐55°C to +125°C 
  %  VDS = 10V, VGS = 0V 
  %  VDS = 10V, ID = 5mA, f = 1kHz 
 
CMRR 
Common Mode Rejection Ratio 
  85 
 
dB  VDG = 5 to 10V, ID = 5mA          
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
BVGSS 
VGS(off) 
IDSS 
IGSS 
IG 
Gate to Source Breakdown Voltage 
Gate to Source Cutoff Voltage 
Gate to Source Saturation Current 
Gate Leakage Current3 
Gate Operating Current 
25 
1 
6 
 
 
TYP. 
 
3.5 
15 
1 
1 
MAX. 
 
6 
30 
500 
500 
gfs 
Forward Transconductance 
4.5  6  9 
gos  Output Conductance    70  200 
CISS 
Input Capacitance 
 
3   
CRSS  Reverse Transfer Capacitance    1   
en 
Equivalent Input Noise Voltage 
 
4   
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 
3. Assumes smaller value in numerator 
UNITS 
V 
V 
mA 
pA 
pA 
mS 
µS 
pF 
pF 
nV/Hz 
CONDITIONS 
IG = ‐1µA, VDS = 0V 
VDS = 10V, ID = 1nA 
VDS = 10V, VGS = 0V 
VGS = ‐15V, VDS = 0V 
VDG = 10V, ID = 5mA 
VDS = 10V, ID= 5mA, f = 1kHz 
VDS = 10V, ID = 5mA, f = 1MHz 
VDS = 10V, ID = 5mA, f = 10kHz 
TO-71 (Top View)
Available Packages:
U440 in TO-71
U440 available as bare die
Please contact Micross for full package and die dimensions:
EWmeba:il:wcwhwwip.cmwoimcwrpoos.nsDe.cnaotmst@a/dSmishitcrierboeuststio.4cnUo.ams.cpxom
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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