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PDF 3N171 Data sheet ( Hoja de datos )
| Número de pieza | 3N171 | |
| Descripción | High Speed Switch | |
| Fabricantes | Micross | |
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3N171
N-CHANNEL MOSFET
The 3N171 is an enhancement mode N-Channel Mosfet
The 3N171 is an enhancement mode N-Channel Mosfet
designed for use as a General Purpose amplifier or
switch
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N171
LOW DRAIN TO SOURCE RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS (Note 1)
@ 25°C (unless otherwise noted)
rDS(on) ≤ 200Ω
td(on) ≤ 3.0ns
(See Packaging Information).
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
Operating Junction Temperature
‐55°C to +135°C
3N171 Features:
Maximum Power Dissipation
Low ON Resistance
Low Capacitance
High Gain
High Gate Breakdown Voltage
Low Threshold Voltage
Continuous Power Dissipation
MAXIMUM CURRENT
Drain to Source
MAXIMUM VOLTAGES
Drain to Gate
Drain to Source
300mW
30mA
±35V
25V
Peak Gate to Source
±35V
3N171 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
CONDITIONS
BVDSS
VDS(on)
Drain to Source Breakdown Voltage 25
Drain to Source “On” Voltage
‐‐
‐‐
‐‐
‐‐
2.0
ID = 10µA, VGS = 0V
V ID = 10mA, VGS = 10V
VGS(th)
Gate to Source Threshold Voltage 1.5
‐‐
2.0
VDS = 10V, ID = 10µA
IGSS
Gate Leakage Current
‐‐ ‐‐
10
IDSS
Drain Leakage Current “Off”
‐‐ ‐‐
10
pA
nA
VGS = ‐35V, VDS = 0V
VGS = 10V, VDS = 10V
ID(on)
gfs
rDS(on)
Crss
ClickCiss
Drain Current “On”
Forward Transconductance
Drain to Source “On” Resistance
Reverse Transfer Capacitance
Input Capacitance
10
1000
‐‐
‐‐
‐‐
To‐‐ ‐‐
‐‐ ‐‐
‐‐ 200
‐‐ 1.3
‐‐ 5
BuymA VGS = 10V, VDS = 10V
µS VDS = 10V, ID = 2mA , f = 1kHz
Ω VGS = 10V, ID = 0A, f = 1kHz
VDS = 0V, VGS = 0V , f = 1MHz
pF VDS = 10V, VGS = 0V , f = 1MHz
Cdb
Drain to Body Capacitance
‐‐ ‐‐ 5.0
VDB = 10V, f = 1MHz
SWITCHING CHARACTERISTICS
SYMBOL
CHARACTERISTIC
MAX UNITS
CONDITIONS
td(on)
tr
Turn On Delay Time
Turn On Rise Time
3
10 ns
VDD = 10V, ID(on) = 10mA, VGS(on) = 10V, VGS(off) = 0V, RG = 50Ω
td(off)
Turn Off Delay Time
3
tf
Turn Off Fall Time
15
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N171 serviceability may be impaired.
Micross Components Europe
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Available Packages:
3N171 in TO-72
3N171 in bare die.
Please contact Micross for full
package and die dimensions
TO-72 (Bottom View)
* Body tied to case
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx
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