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Datasheet 3N165 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3N165 | Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N165 / 3N166
FEATURES
CORPORATION
• Very High Impedance • High Gate Breakdown • Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate |  Calogic LLC | amplifier |
| 2 | 3N165 | MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET 3N165, 3N166
MONOLITHIC DUAL P-CHANNEL
Linear Integrated Systems
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 3N166 Transient G-S Voltag |  Linear Integrated Systems | mosfet |
| 3 | 3N165 | Amplifier 3N165 P-CHANNEL MOSFET
The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N165 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temp |  Micross | amplifier |
| 4 | 3N165 | Trans MOSFET P-CH 40V 0.05A |  New Jersey Semiconductor | mosfet |
| 5 | 3N165-6 | MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET 3N165, 3N166
MONOLITHIC DUAL P-CHANNEL
Linear Integrated Systems
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 3N166 Transient G-S Voltag | Linear Integrated Systems | mosfet |
3N1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3N100E | MTB3N100E MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N100E/D
Designer's
TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package whi  Motorola Semiconductors data | | |
| 2 | 3N121 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 3 | 3N123 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 4 | 3N128 | MOSFET AMPLIFIER MAXIMUM RATINGS
Rating Drain-Source Voltage
Drain-Gate Voltage Gate-Source Voltage
Drain Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol vDs vDg vgs
id
Pd
Tj, Tstg
Value + 20 + 20 ±10 50 330 2.2
-65 to +175
Unit
Vdc Vdc Vdc Motorola Semiconductors amplifier | | |
| 5 | 3N128 | Silicon MOS Transistor General Electric Solid State transistor | | |
| 6 | 3N128 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 7 | 3N129 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | |
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