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PDF IXFK20N120 Data sheet ( Hoja de datos )
| Número de pieza | IXFK20N120 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFK 20N120
IXFX 20N120
VDSS =
ID25 =
=RDS(on)
1200 V
20 A
0.75 Ω
trr ≤ 300 ns
Symbol
VVDDGSRS
VVGGSSM
ID25
IIADRM
EAR
EAS
dv/dt
PD
TJ
TTJsMtg
TL
Md
Weight
Test Conditions
TTJJ
= 25°C to 150°C
= 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TTCC
= 25°C, Note 1
= 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
1200
1200
±30
±40
20
80
10
V
V
V
V
A
A
A
40 mJ
2J
5 V/ns
780 W
-55 ... +150
150
-55 ... +150
300
°C
°C
°C
°C
0.9/6 Nm/lb.in.
6g
10 g
PLUS 247TM
(IXFX)
G
DS
TO-264 AA (IXFK)
D (TAB)
G
DS
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic rectifier
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
VGS = ±30 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
V
2.5 4.5 V
±100 nA
TJ = 25°C
TJ = 125°C
100 µA
2 mA
0.75 Ω
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
z Temperature and lighting controls
Advantages
z PLUS 247TM package for clip or spring
mounting
z Space savings
z High power density
www©.D20a0t3aISXYhSeeAltl4riUgh.tsnreetserved
DS99112(11/03)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFK20N120.PDF ] | |
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