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PDF IXFT52N50P2 Data sheet ( Hoja de datos )
| Número de pieza | IXFT52N50P2 | |
| Descripción | PolarP2 HiperFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Advance Technical Information
PolarP2TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH52N50P2
IXFT52N50P2
VDSS =
ID25 =
RDS(on) ≤
500V
52A
120mΩ
TO-247 (IXFH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
500
500
± 30
± 40
52
150
52
1.5
V
V
V
V
A
A
A
J
15
960
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
6
4
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
2.5 4.5 V
±100 nA
15 μA
1.5 mA
120 mΩ
GDS
TO-268 (IXFT)
D (Tab)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Fast Intrinsic Rectifier
z Avalanche Rated
z Low RDS(ON) and QG
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
w©w20w10.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
DS100256(03/10)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFT52N50P2.PDF ] | |
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