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IXFH52N50P2 の電気的特性と機能

IXFH52N50P2のメーカーはIXYS Corporationです、この部品の機能は「PolarP2 HiperFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFH52N50P2
部品説明 PolarP2 HiperFET Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFH52N50P2 Datasheet, IXFH52N50P2 PDF,ピン配置, 機能
Advance Technical Information
PolarP2TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH52N50P2
IXFT52N50P2
VDSS =
ID25 =
RDS(on)
500V
52A
120mΩ
TO-247 (IXFH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
500
500
± 30
± 40
52
150
52
1.5
V
V
V
V
A
A
A
J
15
960
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
6
4
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
2.5 4.5 V
±100 nA
15 μA
1.5 mA
120 mΩ
GDS
TO-268 (IXFT)
D (Tab)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Fast Intrinsic Rectifier
z Avalanche Rated
z Low RDS(ON) and QG
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
w©w20w10.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
DS100256(03/10)

1 Page





IXFH52N50P2 pdf, ピン配列
IXFH52N50P2
IXFT52N50P2
Fig. 1. Output Characteristics @ TJ = 25ºC
55
50
VGS = 10V
7V
45
40
35
30 6V
25
20
15
10
5 5V
0
012345
VDS - Volts
6
Fig. 3. Output Characteristics @ TJ = 125ºC
55
50
VGS = 10V
7V
45
40 6V
35
30
25
20
5V
15
10
5 4V
0
0 2 4 6 8 10 12 14
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 26A Value vs.
Drain Current
3.4
VGS = 10V
3.0
2.6
TJ = 125ºC
16
2.2
1.8
1.4
TJ = 25ºC
1.0
0.6
0
10 20 30 40 50 60 70 80 90 100 110 120
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
120
VGS = 10V
8V
100
80 7V
60
6V
40
20
0
0
5V
5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 26A Value vs.
Junction Temperature
3.4
3.0 VGS = 10V
2.6
2.2 I D = 52A
1.8 I D = 26A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
55
50
45
40
35
30
25
20
15
10
5
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150
© 2010 IXYS CORPORATION, All Rights Reserved


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部品番号部品説明メーカ
IXFH52N50P2

PolarP2 HiperFET Power MOSFET

IXYS Corporation
IXYS Corporation


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