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PDF IXFH40N50Q Data sheet ( Hoja de datos )
| Número de pieza | IXFH40N50Q | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 40N50Q
IXFT 40N50Q
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
VDSS
ID25
RDS(on)
= 500 V
= 40 A
= 0.14 Ω
trr ≤ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
500 V
500 V
±30 V
±40 V
40 A
160 A
40 A
50 mJ
2.5 mJ
20 V/ns
500 W
-55 to +150
150
-55 to +150
300
°C
°C
°C
°C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
500
2.5
VGS = ±30 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
25 µA
1 mA
0.14 Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
z IXYS advanced low Qg process
z Low gate charge and capacitances
- easier to drive
- faster switching
z International standard packages
z Low RDS (on)
z Rated for unclamped Inductive load
switching (UIS) rated
z Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z Easy to mount
z Space savings
z High power density
www.D©a2t0a0S3 hIXeYeStA4lUl ri.gnhtestreserved
DS99002(01/03)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFH40N50Q.PDF ] | |
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