PDF IXFH320N10T2 Data sheet ( Hoja de datos )

Número de pieza	IXFH320N10T2
Descripción	TrenchT2 HiperFET Power MOSFET
Fabricantes	IXYS Corporation
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No Preview Available ! Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET IXFH320N10T2 IXFT320N10T2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) ≤ 100V 320A 3.5mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 Maximum Ratings 100 100 ± 20 ± 30 320 160 800 160 1.5 V V V V A A A A J 15 1000 -55 ... +175 175 -55 ... +175 300 260 1.13 / 10 6 4 V/ns W °C °C °C °C °C Nm/lb.in. g g Characteristic Values Min. Typ. Max. 100 V 2.0 4.0 V ±200 nA 25 μA 1.75 mA 3.5 mΩ w©w20w10.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved G DS D (Tab) TO-268 (IXFT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Synchronous Recification z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching Applications DS100237(2/10) 1 page Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 300 250 I D = 200A 200 RG = 1Ω , VGS = 10V 150 VDS = 50V 100 I D = 100A 50 0 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 600 130 t r td(on) - - - - 500 TJ = 125ºC, VGS = 10V VDS = 50V 110 400 90 300 200 I D = 200A I D = 100A 70 50 100 30 0 10 1 2 3 4 5 6 7 8 9 10 RG - Ohms Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 500 110 450 105 400 100 350 300 t f td(off) - - - - RG = 1Ω, VGS = 10V 250 VDS = 50V 200 150 TJ = 125ºC TJ = 25ºC 95 90 85 80 75 100 70 50 65 0 60 40 60 80 100 120 140 160 180 200 ID - Amperes IXFH320N10T2 IXFT320N10T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 300 RG = 1Ω , VGS = 10V 250 VDS = 50V 200 TJ = 125ºC 150 TJ = 25ºC 100 50 0 40 60 80 100 120 140 160 180 200 ID - Amperes Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 450 120 t f td(off) - - - - 400 RG = 1Ω, VGS = 10V 110 VDS = 50V 350 100 300 I D = 200A 90 250 80 200 I D = 100A 70 150 60 100 50 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 900 500 800 t f td(off) - - - - TJ = 125ºC, VGS = 10V 700 VDS = 50V 450 400 600 I D = 200A 500 350 300 400 250 300 200 200 I D = 100A 150 100 100 0 50 1 2 3 4 5 6 7 8 9 10 RG - Ohms © 2010 IXYS CORPORATION, All Rights Reserved 5 Page

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