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PDF IXFH24N80P Data sheet ( Hoja de datos )
| Número de pieza | IXFH24N80P | |
| Descripción | PolarHV HiPerFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 24N80P
IXFK 24N80P
IXFT 24N80P
V = 800 V
DSS
ID25 = 24 A
≤RDS(on) 400 mΩ
t
rr
≤ 250 ns
Symbol
Test Conditions
Maximum Ratings TO-247 (IXFH)
V
DSS
VDGR
VGSS
V
GSM
I
D25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
Md
Weight
TL
TSOLD
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
T
C
=
25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
Mounting torque (TO-247 & TO-264)
TO-247
TO-268
TO-264
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
VGS(th)
VDS = VGS, ID = 4 mA
I
GSS
V
GS
=
±30
V,
V
DS
=
0
V
IDSS
VDS = VDSS
V =0V
GS
T
J
=
125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
800 V
800 V
±30 V
±40 V
24 A
55 A
12 A
50 mJ
1.5 J
10 V/ns
650
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
1.13/10 Nm/lb.in.
6g
5g
10 g
300 ° C
260 ° C
Characteristic Values
Min. Typ. Max.
800 V
3.0 5.0 V
±100 nA
25 μA
1000 μA
400 mΩ
G
DS
D (TAB)
TO-268 (IXFT) Case Style
G
S
D (TAB)
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International standard packages
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
www.D© 2a0t0a6SIXhYeSeAtl4l rUigh.ntseretserved
DS99572E(07/06)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFH24N80P.PDF ] | |
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