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IXFH230N10T の電気的特性と機能

IXFH230N10TのメーカーはIXYS Corporationです、この部品の機能は「Trench HiperFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFH230N10T
部品説明 Trench HiperFET Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFH230N10T Datasheet, IXFH230N10T PDF,ピン配置, 機能
Preliminary Technical Information
Trench HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFH230N10T
VDSS =
ID25 =
RDS(on)
100V
230A
4.7mΩ
TO-247
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25 Notes 1, 2
Maximum Ratings
100
100
V
V
± 20 V
± 30 V
230 A
160 A
500 A
115 A
1.5 J
650 W
-55 ... +175
175
-55 ... +175
300
260
6
°C
°C
°C
°C
°C
g
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
±200 nA
50 μA
3 mA
4.7 mΩ
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Package
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
w©w20w09.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll rights reserved
DS100104(01/09)

1 Page





IXFH230N10T pdf, ピン配列
Fig. 1. Output Characteristics
@ 25ºC
240
220
VGS = 15V
10V
200 9V
180 8V
7V
160
140
120 6V
100
80
60
40 5V
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VDS - Volts
Fig. 3. Output Characteristics
@ 150ºC
240
220
VGS = 15V
10V
200 8V
180 7V
160
140 6V
120
100
80
60 5V
40
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 115A Value
vs. Drain Current
3.0
VGS = 10V
2.6 15V - - - -
TJ = 175ºC
2.2
1.8
1.4
1.0
0.6
0
TJ = 25ºC
25 50 75 100 125 150 175 200 225 250 275 300
ID - Amperes
© 2009 IXYS CORPORATION, All rights reserved
IXFH230N10T
Fig. 2. Extended Output Characteristics
@ 25ºC
350
VGS = 15V
300
10V
8V
250 7V
200
150 6V
100
50 5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 115A Value
vs. Junction Temperature
2.8
2.6 VGS = 10V
2.4
2.2
2.0 I D = 230A
1.8 I D = 115A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
180
External Lead Current Limit
160
140
120
100
80
60
40
20
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade


3Pages


IXFH230N10T 電子部品, 半導体
IXFH230N10T
Fig. 19. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_230N10T(7V)1-27-09

6 Page



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部品番号部品説明メーカ
IXFH230N10T

Trench HiperFET Power MOSFET

IXYS Corporation
IXYS Corporation


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