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IXFH230N075T2 の電気的特性と機能

IXFH230N075T2のメーカーはIXYS Corporationです、この部品の機能は「TrenchT2 HiperFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFH230N075T2
部品説明 TrenchT2 HiperFET Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFH230N075T2 Datasheet, IXFH230N075T2 PDF,ピン配置, 機能
TrenchT2TM HiperFETTM IXFH230N075T2
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
VDSS =
ID25 =
RDS(on)
75V
230A
4.2mΩ
TO-247
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Maximum Ratings
75
75
V
V
± 20 V
230 A
160 A
700 A
115 A
850 mJ
480 W
-55 ... +175
175
-55 ... +175
300
260
6
°C
°C
°C
°C
°C
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Note 1
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
±200 nA
25 μA
250 μA
4.2 mΩ
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Package
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Automotive
- Motor Drives
- 12V Power Bus
- ABS Systems
z DC/DC Converters and Off-Line UPS
z Primary- Side Switch
z High Current Switching Applications
w©w20w10.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
DS100075A(03/10)

1 Page





IXFH230N075T2 pdf, ピン配列
IXFH230N075T2
Fig. 1. Output Characteristics @ TJ = 25ºC
240
VGS = 15V
10V
200 9V
8V
160
7V
120
80
6V
40
5V
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
240
VGS = 15V
10V
200 9V
8V
160
7V
120
80 6V
40
5V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS - Volts
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
Fig. 5. RDS(on) Normalized to ID = 115A Value vs.
Drain Current
VGS = 10V
15V - - - -
TJ = 175ºC
TJ = 25ºC
50 100 150 200 250
ID - Amperes
300
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
320 VGS = 15V
10V
280 9V
240
8V
200
7V
160
120
6V
80
40 5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 115A Value vs.
Junction Temperature
2.6
2.4 VGS = 10V
2.2
2.0
1.8 I D = 230A
1.6 I D = 115A
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25 50 75 100 125 150
TJ - Degrees Centigrade
175
180
160
140
120
100
80
60
40
20
0
-50
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
-25 0 25 50 75 100 125 150 175 200
TC - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved


3Pages


IXFH230N075T2 電子部品, 半導体
1.000
0.100
0.010
0.001
0.00001
0.0001
IXFH230N075T2
Fig. 19. Maximum Transient Thermal Impedance
0.001 0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_230N075T2(V6)02-26-10-C

6 Page



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部品番号部品説明メーカ
IXFH230N075T2

TrenchT2 HiperFET Power MOSFET

IXYS Corporation
IXYS Corporation


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