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PDF IXFT20N60Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT20N60Q | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt,
Low Gate Charge and Capacitances
IXFH 20N60Q
IXFT 20N60Q
VDSS = 600 V
ID25 = 20 A
RDS(on) = 0.35 Ω
trr ≤ 250ns
Symbol
V
DSS
V
DGR
VGS
V
GSM
I
D25
IDM
IAR
E
AR
EAS
dv/dt
PD
T
J
TJM
Tstg
T
L
Md
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
= 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
600 V
600 V
±30 V
±40 V
20 A
80 A
20 A
30 mJ
1.5 J
15 V/ns
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
600 V
V
GS(th)
V = V , I = 4 mA
DS GS D
2.0 4.5 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
1 mA
R
DS(on)
V = 10 V, I = 0.5 I
GS D D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.35 Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
Features
z IXYS advanced low gate charge
process
z International standard packages
z Low gate charge and capacitance
- easier to drive
- faster switching
z Low R
DS (on)
z Unclamped Inductive Switching (UIS)
rated
z Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z Easy to mount
z Space savings
z High power density
www.D©a2t0a0S3 hIXeYeStA4lUl ri.gnhtestreserved
DS98549C(03/03)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFT20N60Q.PDF ] | |
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