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PDF IXFT20N100P Data sheet ( Hoja de datos )
| Número de pieza | IXFT20N100P | |
| Descripción | Polar Power MOSFET HiPerFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH20N100P
IXFT20N100P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
1000
1000
V
V
± 30 V
± 40 V
20 A
50 A
10 A
800 mJ
15
660
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
300 °C
260 °C
1.13/10
6
5
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5 6.5 V
± 200 nA
25 μA
1.5 mA
470 570 mΩ
VDSS = 1000V
ID25 = 20A
≤RDS(on) 570mΩ
trr ≤ 300ns
TO-247 (IXFH)
TAB
TO-268 (IXFT)
GS
TAB
G = Gate D = Drain
S = Source TAB = Drain
Features
z International standard packages
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor controls
z Robotics and servo controls
w©w2w008.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll rights reserved
DS99843B(04/08)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFT20N100P.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| IXFT20N100P | Polar Power MOSFET HiPerFET | IXYS Corporation |
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