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Número de pieza | IXFT16N80P | |
Descripción | PolarHV Power MOSFET | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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No Preview Available ! PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
IXFH 16N80P
IXFT 16N80P
IXFV 16N80P
IXFV 16N80PS
VDSS = 800
ID25 = 16
RDS(on) ≤ 600
trr ≤ 250
V
A
mΩ
ns
Symbol
V
DSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
E
AR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
TSOLD
Md
F
C
Weight
Test Conditions
T
J
=
25°C
to
150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
=
25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
T
J
≤
150°C,
R
G
=
5
Ω
T
C
=
25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 & PLUS220SMD
TO-247 (IXFH)
Maximum Ratings
800 V
800 V
±30 V
±40 V
16 A
40 A
G
DS
TO-268 (IXFT)
8A
30 mJ
G
S
1.0 J
PLUS220 (IXFV)
10 V/ns
D (TAB)
460 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 ° C
260 ° C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb
6.0 g
5.0 g
4.0 g
G
D
S
D (TAB)
PLUS220SMD (IXFV...S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
Characteristic Values
Min. Typ. Max.
800 V
V
GS(th)
V = V , I = 4 mA
DS GS D
3.0 5.0 V
IGSS VGS = ±30 V, VDS = 0 V
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 μA
250 μA
R
DS(on)
V = 10 V, I = 0.5 I
GS D D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
600 mΩ
Features
z Fast Recovery diode
z Unclamped Inductive Switching (UIS)
rated
z International standard packages
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
www©.D20a0t6aISXhYSeeAtll4riUght.snreesterved
DS99599E(07/06)
1 page TO-247 AD (IXFH) Outline
12
3
TO-268 (IXFT) Outline
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
PLUS220 (IXFV) Outline
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220SMD (IXFV_S) Outline
© 2006 IXYS All rights reserved
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXFT16N80P.PDF ] |
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IXFT16N80P | PolarHV Power MOSFET | IXYS Corporation |
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