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IXFH16N80PのメーカーはIXYS Corporationです、この部品の機能は「PolarHV Power MOSFET」です。 |
部品番号 | IXFH16N80P |
| |
部品説明 | PolarHV Power MOSFET | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXFH16N80Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
IXFH 16N80P
IXFT 16N80P
IXFV 16N80P
IXFV 16N80PS
VDSS = 800
ID25 = 16
RDS(on) ≤ 600
trr ≤ 250
V
A
mΩ
ns
Symbol
V
DSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
E
AR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
TSOLD
Md
F
C
Weight
Test Conditions
T
J
=
25°C
to
150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
=
25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
T
J
≤
150°C,
R
G
=
5
Ω
T
C
=
25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 & PLUS220SMD
TO-247 (IXFH)
Maximum Ratings
800 V
800 V
±30 V
±40 V
16 A
40 A
G
DS
TO-268 (IXFT)
8A
30 mJ
G
S
1.0 J
PLUS220 (IXFV)
10 V/ns
D (TAB)
460 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 ° C
260 ° C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb
6.0 g
5.0 g
4.0 g
G
D
S
D (TAB)
PLUS220SMD (IXFV...S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
Characteristic Values
Min. Typ. Max.
800 V
V
GS(th)
V = V , I = 4 mA
DS GS D
3.0 5.0 V
IGSS VGS = ±30 V, VDS = 0 V
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 μA
250 μA
R
DS(on)
V = 10 V, I = 0.5 I
GS D D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
600 mΩ
Features
z Fast Recovery diode
z Unclamped Inductive Switching (UIS)
rated
z International standard packages
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
www©.D20a0t6aISXhYSeeAtll4riUght.snreesterved
DS99599E(07/06)
1 Page Fig. 1. Output Characteristics
@ 25ºC
16
VGS = 10V
14 7V
12
10 6V
8
6
4
5V
2
0
0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
16
VGS = 10V
14 7V
6V
12
10
8 5V
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 5. FRiDgS.(o7n.)INnoprumtaAlizdemd ittotaIDn=ce8A Value
vs. Drain Current
50
2.6
45
2.4
VGS = 10V
40
2.2
35
2
30
TJ = 125ºC
1.8
25
210.6 TJ = 125º C
25º C
115.4 -40º C
110.2
TJ = 25ºC
51
00.8
40
2 4.54
6 5 8 51.05 12 614 166.5 18 270 227.524
VIDG-SA-mVpeorlets
© 2006 IXYS All rights reserved
IXFH 16N80P IXFT 16N80P
IXFV 16N80P IXFV 16N80PS
24
22
20
18
16
14
12
10
8
6
4
2
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 10V
7V
6V
5V
2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 8A Value
vs. Junction Temperature
3.1
2.8 VGS = 10V
2.5
2.2
1.9
I D = 16A
1.6
I D = 8A
1.3
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
FigF.ig6.. M8.aTxirmaunmscDornaidnuCcutrarnecnet vs.
2050
Case Temperature
1845
1640
1435
30
12
TJ = -40º C
25º C
125º C
1025
820
615
410
5
2
0
0
-50 0 -255
100 1525 20 5025 7350 31500 4012545 15500
TC - DIeDgr-eeAsmCpeentrigersade
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXFH16N80P | PolarHV Power MOSFET | IXYS Corporation |