DataSheet.jp

IXFT150N17T2 の電気的特性と機能

IXFT150N17T2のメーカーはIXYS Corporationです、この部品の機能は「TrenchT2 HiperFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFT150N17T2
部品説明 TrenchT2 HiperFET Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




このページの下部にプレビューとIXFT150N17T2ダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

IXFT150N17T2 Datasheet, IXFT150N17T2 PDF,ピン配置, 機能
Advance Technical Information
TrenchT2TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH150N17T2
IXFT150N17T2
VDSS =
ID25 =
RDS(on)
trr
175V
150A
12.0mΩ
160ns
TO-247 (IXFH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 175°C
TC = 25°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
175
175
± 20
± 30
150
400
75
1.0
V
V
V
V
A
A
A
J
15
880
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
4
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
175 V
2.5 4.5 V
± 200 nA
10 μA
1.5 mA
9.7 12.0 mΩ
G
DS
D (Tab)
TO-268 (IXFT)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z High Current Handling Capability
z Fast Intrinsic Diode
z Dynamaic dv/dt Rated
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
w©w2w010.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
DS100229(01/10)

1 Page





IXFT150N17T2 pdf, ピン配列
IXFH150N17T2
IXFT150N17T2
160
140
120
100
80
60
40
20
0
0.0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
8V
7V
6V
5V
4V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VDS - Volts
1.8
Fig. 3. Output Characteristics @ TJ = 150ºC
160
VGS = 10V
140 7V
6V
120
100
80
5V
60
40
20
4V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 75A Value
vs. Drain Current
4.0
VGS = 10V
3.5
TJ = 175ºC
3.0
2.5
2.0
1.5 TJ = 25ºC
1.0
0.5
0
50 100 150 200 250 300
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
350
VGS = 10V
300 8V
250 7V
200
6V
150
100
50
5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 75A Value
vs. Junction Temperature
3.4
3.0 VGS = 10V
2.6
ID = 150A
2.2
1.8 ID = 75A
1.4
1.0
0.6
0.2
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
175
160
140
120
100
80
60
40
20
0
-50
Fig. 6. Drain Current vs. Case Temperature
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade
175
© 2010 IXYS CORPORATION, All Rights Reserved


3Pages


IXFT150N17T2 電子部品, 半導体
1.000
0.100
0.010
0.001
0.00001
Fig. 19. Maximum Transient Thermal Impedance
IXFH150N17T2
IXFT150N17T2
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_150N17T2(7V)1-14-10

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ IXFT150N17T2 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IXFT150N17T2

TrenchT2 HiperFET Power MOSFET

IXYS Corporation
IXYS Corporation


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap