IXFV14N80P Datasheet PDF - IXYS Corporation
| Part Number | IXFV14N80P | |
| Description | PolarHV HiPerFET Power MOSFET | |
| Manufacturers | IXYS Corporation | |
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There is a preview and IXFV14N80P download ( pdf file ) link at the bottom of this page. Total 5 Pages | ||
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PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 14N80P
IXFQ 14N80P
IXFT 14N80P
IXFV 14N80P
IXFV 14N80PS
VDSS =
ID25 =
≤RDS(on)
t
rr
≤
800
14
720
250
TO-247 (IXFH)
V
A
mΩ
ms
Symbol
VDSS
VDGR
VGS
V
GSM
ID25
IDM
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
M
d
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
=
25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
PLUS220, PLUS220 SMD
TO-268, TO-3P
TO-247
Maximum Ratings
800 V
800 V
± 30 V
± 40 V
14 A
40 A
7A
30 mJ
500 mJ
10 V/ns
400
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
2g
5.5 g
6g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250μA
Characteristic Values
Min. Typ. Max.
800 V
VGS(th)
VDS = VGS, ID = 4 mA
3.0 5.5 V
IGSS VGS = ±30 V, VDS = 0 V
±100 nA
IDSS
RDS(on)
VDS = VDSS
VGS = 0 V
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
25 μA
1 mA
720 mΩ
www©.D20a0t6aISXhYSeeAltl4riUght.snreesterved
TO-3P (IXFQ)
D (TAB)
G
D
S
TO-268 (IXFT)
G
S
PLUS220 (IXFV)
(TAB)
D (TAB)
G
DS
PLUS220SMD (IXFV...S)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
DS99593E(07/06)
|
| |
 
TO-3P-3L PACKAGE Outline
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
PLUS220 (IXFV) Outline
1. GATE
2. DRAIN (COLLECTOR)
3. SOURCE (EMITTER)
4. DRAIN (COLLECTOR)
ALL METAL AREA ARE TIN PLATED.
Ref: IXYS CO 0170 RA
© 2006 IXYS All rights reserved
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IXFV14N80P electronic component. |
| Information | Total 5 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IXFV14N80P.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| IXFV14N80P | The function is PolarHV HiPerFET Power MOSFET. IXYS Corporation | |
| IXFV14N80PS | The function is PolarHV HiPerFET Power MOSFET. IXYS Corporation | |
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