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IXFH14N80P の電気的特性と機能

IXFH14N80PのメーカーはIXYS Corporationです、この部品の機能は「PolarHV HiPerFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFH14N80P
部品説明 PolarHV HiPerFET Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFH14N80P Datasheet, IXFH14N80P PDF,ピン配置, 機能
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 14N80P
IXFQ 14N80P
IXFT 14N80P
IXFV 14N80P
IXFV 14N80PS
VDSS =
ID25 =
RDS(on)
t
rr
800
14
720
250
TO-247 (IXFH)
V
A
mΩ
ms
Symbol
VDSS
VDGR
VGS
V
GSM
ID25
IDM
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
M
d
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
=
25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS,
TJ 150°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
PLUS220, PLUS220 SMD
TO-268, TO-3P
TO-247
Maximum Ratings
800 V
800 V
± 30 V
± 40 V
14 A
40 A
7A
30 mJ
500 mJ
10 V/ns
400
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
2g
5.5 g
6g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250μA
Characteristic Values
Min. Typ. Max.
800 V
VGS(th)
VDS = VGS, ID = 4 mA
3.0 5.5 V
IGSS VGS = ±30 V, VDS = 0 V
±100 nA
IDSS
RDS(on)
VDS = VDSS
VGS = 0 V
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 μs, duty cycle d 2 %
25 μA
1 mA
720 mΩ
www©.D20a0t6aISXhYSeeAltl4riUght.snreesterved
TO-3P (IXFQ)
D (TAB)
G
D
S
TO-268 (IXFT)
G
S
PLUS220 (IXFV)
(TAB)
D (TAB)
G
DS
PLUS220SMD (IXFV...S)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
DS99593E(07/06)

1 Page





IXFH14N80P pdf, ピン配列
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Fig. 1. Output Characteristics
@ 25ºC
14
VGS = 10V
7V
12
10
6V
8
6
4
5V
2
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
14
VGS = 10V
12
6V
10
8 5V
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 7A Value vs.
Drain Current
2.8
2.6 VGS = 10V
2.4
TJ = 125ºC
2.2
2
1.8
1.6
1.4
1.2
TJ = 25ºC
1
0.8
0 4 8 12 16 20 24 28
ID - Amperes
27
24
21
18
15
12
9
6
3
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 10V
7V
6V
5V
3 6 9 12 15 18 21 24 27 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 7A Value vs.
Junction Temperature
3.1
2.8 VGS = 10V
2.5
2.2
1.9 I D = 14A
1.6 I D = 7A
1.3
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
16
14
12
10
8
6
4
2
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0
25 50 75 100 125 150
TC - Degrees Centigrade
© 2006 IXYS All rights reserved


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共有リンク

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部品番号部品説明メーカ
IXFH14N80

HiPerFET Power MOSFETs

IXYS Corporation
IXYS Corporation
IXFH14N80P

PolarHV HiPerFET Power MOSFET

IXYS Corporation
IXYS Corporation


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