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PDF IXFV12N100PS Data sheet ( Hoja de datos )
| Número de pieza | IXFV12N100PS | |
| Descripción | Polar HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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PolarTM HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFH12N100P
IXFV12N100P
IXFV12N100PS
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
Maximum Ratings
1000
1000
± 30
± 40
V
V
V
V
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
12
24
6
750
15
463
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300 °C
260 °C
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Mounting Force (PLUS220)
11..65/2.5..14.6
N/lb.
TO-247
PLUS220 types
6g
4g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5 6.5 V
± 100 nA
20 μA
1.0 mA
1.05 Ω
w©w2w011.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
VDSS =
ID25 =
≤RDS(on)
trr ≤
1000V
12A
1.05Ω
300ns
PLUS220 (IXFV)
GDS
D (Tab)
PLUS220SMD (IXFV_S)
G
S
D (Tab)
TO-247 (IXFH)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Low RDS(on) and QG
z Avalanche Rated
z Low Package Inductance
z Fast Intrinsic Rectifier
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
DS99920B(03/11)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFV12N100PS.PDF ] | |
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