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IXFV12N100P の電気的特性と機能

IXFV12N100PのメーカーはIXYS Corporationです、この部品の機能は「Polar HiPerFET Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFV12N100P
部品説明 Polar HiPerFET Power MOSFETs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFV12N100P Datasheet, IXFV12N100P PDF,ピン配置, 機能
PolarTM HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFH12N100P
IXFV12N100P
IXFV12N100PS
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
Maximum Ratings
1000
1000
± 30
± 40
V
V
V
V
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
12
24
6
750
15
463
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300 °C
260 °C
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Mounting Force (PLUS220)
11..65/2.5..14.6
N/lb.
TO-247
PLUS220 types
6g
4g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5 6.5 V
± 100 nA
20 μA
1.0 mA
1.05 Ω
w©w2w011.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
VDSS =
ID25 =
RDS(on)
trr
1000V
12A
1.05Ω
300ns
PLUS220 (IXFV)
GDS
D (Tab)
PLUS220SMD (IXFV_S)
G
S
D (Tab)
TO-247 (IXFH)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Low RDS(on) and QG
z Avalanche Rated
z Low Package Inductance
z Fast Intrinsic Rectifier
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
DS99920B(03/11)

1 Page





IXFV12N100P pdf, ピン配列
Fig. 1. Output Characteristics @ TJ = 25ºC
12
VGS = 10V
8V
10
7V
8
6V
6
4
2 5V
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
12
VGS = 10V
7V
10
8
6V
6
4 5V
2
0
0 5 10 15 20 25 30
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 6A Value vs.
Drain Current
2.8
2.6
VGS = 10V
2.4
TJ = 125ºC
2.2
2.0
1.8
1.6
1.4
1.2 TJ = 25ºC
1.0
0.8
0 2 4 6 8 10 12 14 16 18 20 22
ID - Amperes
24
IXFH12N100P IXFV12N100P
IXFV12N100PS
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
24
VGS = 10V
8V
20
16 7V
12
6V
8
4 5V
0
0 5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 6A Value vs.
Junction Temperature
3.2
2.8 VGS = 10V
2.4
2.0 I D = 12A
1.6 I D = 6A
1.2
0.8
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
14
12
10
8
6
4
2
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved


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部品番号部品説明メーカ
IXFV12N100P

Polar HiPerFET Power MOSFETs

IXYS Corporation
IXYS Corporation
IXFV12N100PS

Polar HiPerFET Power MOSFETs

IXYS Corporation
IXYS Corporation


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