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IXFH110N25T の電気的特性と機能

IXFH110N25TのメーカーはIXYS Corporationです、この部品の機能は「TrenchHV Power MOSFET HiPerFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFH110N25T
部品説明 TrenchHV Power MOSFET HiPerFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFH110N25T Datasheet, IXFH110N25T PDF,ピン配置, 機能
TrenchHVTM Power
MOSFET HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
IXFH110N25T
VDSS =
ID25 =
RDS(on)
250V
110A
24mΩ
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
Maximum Ratings
250
250
± 20
± 30
110
75
300
25
1
V
V
V
V
A
A
A
A
J
10
694
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
6
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 3mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
250 V
2.5 4.5 V
± 200 nA
10 μA
1 mA
24 mΩ
TO-247 (IXFH)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard package
z Avalanche rated
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor drives
z Uninterruptible power supplies
w©w20w08.DIXaYStaCSOhRePeOtR4AUTIO.nNe, tAll rights reserved
DS99905A(08/08)

1 Page





IXFH110N25T pdf, ピン配列
IXFH110N25T
Fig. 1. Output Characteristics
@ 25ºC
110
100
VGS = 10V
8V
90 7V
6V
80
70
60
50 5.5V
40
30
20
10 5V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6
VDS - Volts
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
8V
7V
6V
5V
12345
VDS - Volts
6
Fig. 5. RDS(on) Normalized to ID = 55A Value
vs. Drain Current
3.4
VGS = 10V
3.0
TJ = 125ºC
2.6
2.2
1.8
1.4
TJ = 25ºC
1.0
0.6
0
20 40 60 80 100 120 140 160 180 200 220 240 260
ID - Amperes
250
225
200
175
150
125
100
75
50
25
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
5V
2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 55A Value
vs. Junction Temperature
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
VGS = 10V
-25 0
I D = 110A
I D = 55A
25 50 75 100
TJ - Degrees Centigrade
125
150
90
80
70
60
50
40
30
20
10
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
External Lead Current Limit
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150
© 2008 IXYS CORPORATION, All rights reserved


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部品番号部品説明メーカ
IXFH110N25T

TrenchHV Power MOSFET HiPerFET

IXYS Corporation
IXYS Corporation


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