|
|
PDF IXFH110N15T2 Data sheet ( Hoja de datos )
| Número de pieza | IXFH110N15T2 | |
| Descripción | TrenchT2 HiperFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXFH110N15T2 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Preliminary Technical Information
TrenchT2TM HiperFET
Power MOSFET
IXFH110N15T2
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
150V
110A
13mΩ
TO-247
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
Tsold
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Maximum Ratings
150
150
V
V
± 20 V
± 30 V
110 A
300 A
55 A
800 mJ
15 V/ns
480 W
-55 ... +175
175
-55 ... +175
300
260
6
°C
°C
°C
°C
°C
g
Characteristic Values
Min. Typ. Max.
150 V
2.5 4.5 V
±200 nA
25 μA
500 μA
13 mΩ
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard package
z 175°C Operating Temperature
z High current handling capability
z Fast intrinsic Rectifier
z Dynamic dV/dt rated
z Low RDS(on)
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor drives
z Uninterruptible power supplies
z High speed power switching
applications
w©w20w08.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll rights reserved
DS100094(12/08)
1 page  
IXFH110N15T2
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
19
RG = 3.3Ω
VGS = 10V
18 VDS = 75V
17
16 I D = 110A
15
I D = 55A
14
13
12
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
280
240
t r td(on) - - - -
TJ = 125ºC, VGS = 10V
200 VDS = 75V
160 I D = 110A
90
80
70
60
120 50
I D = 55A
80 40
40 30
0 20
2 4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
23 80
t f td(off) - - - -
22
RG = 3.3Ω, VGS = 10V
70
VDS = 75V
21 60
20 TJ = 125ºC
19
TJ = 25ºC
50
40
18 30
17 20
55 60 65 70 75 80 85 90 95 100 105 110
ID - Amperes
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20
RG = 3.3Ω
19 VGS = 10V
VDS = 75V
18 TJ = 125ºC
17
16 TJ = 25ºC
15
14
55 60 65 70 75 80 85 90 95 100 105 110
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
28 80
t f td(off) - - - -
26 RG = 3.3Ω, VGS = 10V
VDS = 75V
70
24 60
22 50
I D = 55A, 110A
20 40
18 30
16 20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
120
t f td(off) - - - -
100 TJ = 125ºC, VGS = 10V
VDS = 75V
80
60 I D = 55A
250
210
170
130
40 90
I D = 110A
20 50
0 10
2 4 6 8 10 12 14 16 18 20
RG - Ohms
© 2008 IXYS CORPORATION, All rights reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFH110N15T2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXFH110N15T2 | TrenchT2 HiperFET Power MOSFET | IXYS Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |